N-Channel MOSFET. 2SK3767 Datasheet

2SK3767 MOSFET. Datasheet pdf. Equivalent

Part 2SK3767
Description Silicon N-Channel MOSFET
Feature www.DataSheet4U.com 2SK3767 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2.
Manufacture Toshiba Semiconductor
Datasheet
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2SK3767
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2SK3767
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
2SK3767
Switching Regulator Applications
Unit: mm
Low drain-source ON resistance: RDS (ON) = 3.3Ω (typ.)
High forward transfer admittance: |Yfs| = 1.6S (typ.)
Low leakage current: IDSS = 100μA (VDS = 600 V)
Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (RGS = 20 k)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
Rating
Unit
VDSS 600 V
VDGR 600 V
VGSS ±30 V
ID 2
A
IDP 5
PD 25 W
EAS 93 mJ
IAR 2 A
EAR DataShe4et4U.commJ
Tch 150 °C
Tstg
-55~150
°C
Thermal Characteristics
1: Gate
2: Drain
3: Source
JEDEC
JEITA
SC-67
TOSHIBA
2-10U1B
Weight : 1.7 g (typ.)
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c)
Rth (ch-a)
5.0
62.5
°C/W
°C/W
Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: VDD = 90 V, Tch = 25°Cinitial)), L = 41mH, RG = 25 , IAR = 2 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
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2
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2SK3767
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2SK3767
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Gate leakage current
Gate-source breakdown voltage
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
IGSS
V (BR) GSS
IDSS
V (BR) DSS
Vth
RDS (ON)
Yfs
Ciss
Crss
Coss
VGS = ±25 V, VDS = 0 V
IG = ±10 µA, VDS = 0 V
VDS = 600 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 1 A
VDS = 10 V, ID = 1 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
⎯ ⎯ ±10 µA
±30
V
⎯ ⎯ 100 µA
600
V
2.0 4.0
V
3.3 4.5
0.8 1.6
S
320
30 pF
100
Rise time
Switching time Turn-on time
Fall time
Turn-off time
tr 10 V
VGS
ton 0 V
tf
ID = 1A
15
Output
RL =
200
55
ns
20
toff Duty <= 1%, tw = 10 µs VDD ∼− 200 V 80
Total gate charge
Gate-source charge
Gate-drain charge
Qg
Qgs VDD ∼− 400 V, VGS = 10 V, ID = 2A
Qgd
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9
5 nC
4
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current (Note 1)
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
(Note 1)
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
IDR = 2 A, VGS = 0 V
IDR = 2 A, VGS = 0 V,
dIDR/dt = 100 A/µs
Min Typ. Max Unit
⎯⎯ 2 A
⎯⎯ 5 A
⎯ ⎯ −1.7 V
1000
ns
3.5 ⎯ µC
Marking
DataShee
K3767
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
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