2SK3767 Datasheet | Silicon N Channel MOS Type Switching Regulator Applications





(Datasheet) 2SK3767 Datasheet PDF Download

Part Number 2SK3767
Description Silicon N Channel MOS Type Switching Regulator Applications
Manufacture Toshiba Semiconductor
Total Page 6 Pages
PDF Download Download 2SK3767 Datasheet PDF

Features: www.DataSheet4U.com 2SK3767 TOSHIBA Fie ld Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3767 Switching Regulator Applications • • • • Low drain-source ON resistance: RDS (ON ) = 3.3Ω (typ.) High forward transfer admittance: |Yfs| = 1.6S (typ.) Low lea kage current: IDSS = 100μA (VDS = 600 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Maxi mum Ratings (Ta = 25°C) Characteristic s Drain-source voltage Drain-gate volta ge (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1 ) Symbol VDSS VDGR VGSS ID IDP PD EAS I AR EAR Tch Tstg Rating 600 600 ±30 2 5 25 93 2 Unit V V V A W mJ A 1: Gate 2: Drain 3: Source Drain power dissipati on (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repet itive avalanche energy (Note 3) Channel temperature Storage temperature range DataShee JEDEC JEITA TOSHIBA ― SC-67 2-10U1B DataSheet4U.com 4 mJ 150 -55~ 150 °C °C Weight : 1.7 g (typ.) Thermal Characteristics Characteristics Thermal.

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2SK3767
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
2SK3767
Switching Regulator Applications
Unit: mm
Low drain-source ON resistance: RDS (ON) = 3.3Ω (typ.)
High forward transfer admittance: |Yfs| = 1.6S (typ.)
Low leakage current: IDSS = 100μA (VDS = 600 V)
Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (RGS = 20 k)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
Rating
Unit
VDSS 600 V
VDGR 600 V
VGSS ±30 V
ID 2
A
IDP 5
PD 25 W
EAS 93 mJ
IAR 2 A
EAR DataShe4et4U.commJ
Tch 150 °C
Tstg
-55~150
°C
Thermal Characteristics
1: Gate
2: Drain
3: Source
JEDEC
JEITA
SC-67
TOSHIBA
2-10U1B
Weight : 1.7 g (typ.)
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c)
Rth (ch-a)
5.0
62.5
°C/W
°C/W
Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: VDD = 90 V, Tch = 25°Cinitial)), L = 41mH, RG = 25 , IAR = 2 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
1
2
3
DataShee
DataSheet4U.com
DataSheet4 U .com
1 2004-12-10

                 






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