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TRW54601
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI TRW54601 is Designed for General Pur...
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TRW54601
NPN SILICON RF POWER
TRANSISTOR
DESCRIPTION:
The ASI TRW54601 is Designed for General Purpose Oscillator Applications up to 2.3 GHz.
PACKAGE STYLE .280 4L STUD
FEATURES:
Diffused Ballast Resistors Omnigold™ Metalization System Common Emitter
MAXIMUM RATINGS
IC VCES PDISS TJ TSTG θJC 400 mA 50 V 3.0 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +200 °C 35 °C/W
1 = COLLECTOR 2 = EMITTER 3 = BASE
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CHARACTERISTICS
SYMBOL
BVCEO BVCES BVEBO ICBO hFE COB PG VSRW IC = 10 mA IC = 10 mA IE = 1.0 mA VCB = 28 V VCE = 5.0 V VCB = 28 V
TC = 25 °C
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
22 50 3.5 0.5
UNITS
V V V mA ---
IC = 100 mA f = 1.0 MHz IC = 120 mA f = 2.3 GHz
20 2.4 8.5 9.5 30:0 3.0
pF dB ---
VCE = 20 V POUT = 0.5 W
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A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
Specifications are subject to change without notice.
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