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TRW54601

Advanced Semiconductor

NPN SILICON RF POWER TRANSISTOR

www.DataSheet4U.com TRW54601 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TRW54601 is Designed for General Pur...


Advanced Semiconductor

TRW54601

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Description
www.DataSheet4U.com TRW54601 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TRW54601 is Designed for General Purpose Oscillator Applications up to 2.3 GHz. PACKAGE STYLE .280 4L STUD FEATURES: Diffused Ballast Resistors Omnigold™ Metalization System Common Emitter MAXIMUM RATINGS IC VCES PDISS TJ TSTG θJC 400 mA 50 V 3.0 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +200 °C 35 °C/W 1 = COLLECTOR 2 = EMITTER 3 = BASE DataShee DataSheet4U.com CHARACTERISTICS SYMBOL BVCEO BVCES BVEBO ICBO hFE COB PG VSRW IC = 10 mA IC = 10 mA IE = 1.0 mA VCB = 28 V VCE = 5.0 V VCB = 28 V TC = 25 °C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM 22 50 3.5 0.5 UNITS V V V mA --- IC = 100 mA f = 1.0 MHz IC = 120 mA f = 2.3 GHz 20 2.4 8.5 9.5 30:0 3.0 pF dB --- VCE = 20 V POUT = 0.5 W DataSheet4U.com A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 DataSheet 4 U .com ...




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