Document
2SK1317
Silicon N-Channel MOS FET
Application
www.DataSheet4U.com
High speed power switching
Features
• • • • • High breakdown voltage V DSS = 1500 V High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver
Outline
TO-3P
D
G
1 2 3 1. Gate 2. Drain (Flange) 3. Source
S
2SK1317
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
www.DataSheet4U.com 2. Value at TC = 25°C
Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg
2 1
Ratings 1500 ±20 2.5 7 2.5 100 150 –55 to +150
Unit V V A A A W °C °C
Electrical Characteristics (Ta = 25°C)
Item Drain to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS I GSS 1500 — — 2.0 — 0.45 — — — — — — — — — Typ — — — — 9 0.75 990 125 60 17 70 110 60 0.9 1750 Max — ±1 500 4.0 12 — — — — — — — — — — Unit V µA µA V Ω S pF pF pF ns ns ns ns V ns I F = 2 A, VGS = 0 I F = 2 A, VGS = 0, diF/dt = 100 A/µs I D = 2 A, VGS = 10 V, RL = 15 Ω Test conditions I D = 10 mA, VGS = 0 VGS = ±20 V, VDS = 0 VDS = 1200 V, VGS = 0 I D = 1 mA, VDS = 10 V I D = 2 A, VGS = 15 V *1 I D = 1 A, VDS = 20 V *1 VDS = 10 V, VGS = 0, f = 1 MHz
Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1. Pulse test VGS(off) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr
2
2SK1317
Power vs. Temperature Derating 120 Channel Dissipation Pch (W) 10 3 Drain Current ID (A)
D
Maximum Safe Operation Area
10
10
0 µs
µs
PW
C O pe
=
ra
1
80
1.0 0.3 0.1
10
tio
m
s
m
s
C
n
(1
=
(T
Sh
25
ot
)
)
40
°C
0.03 0.01 10
Operation in this area is limited by RDS (on)
Ta = 25°C
50 100 Case Temperature TC (°C) www.DataSheet4U.com
0
150
30 100 300 1,000 3,000 10,000 Drain to Source Voltage VDS (V)
Typical Output Characteristics 5 Pulse Test 15 V 2.0 10 V 8V 7V 3 6V Drain Current ID (A) 1.6
Typical Transfer Characteristics
4 Drain Current ID (A)
VDS = 20 V Pulse Test
1.2
2
0.8
1
5V VGS = 4 V
75°C TC = 25°C –25°C
0.4
0
20 60 80 40 100 Drain to Source Voltage VDS (V)
0
2 6 8 10 4 Gate to Source Voltage VGS (V)
3
2SK1317
Drain to Source Saturation Voltage VDS (on) (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage 50 Pulse Test 40 ID = 3 A 30 2A 1A 0.5 A 4 12 16 8 Gate to Source Voltage VGS (V) 20 Static Drain to Source on State Resistance RDS (on) (Ω) 50 20 10 5 Static Drain to Source on State Resistance vs. Drain Current
VGS = 10 V 15 V
20
2 1.0 0.5 0.1 Pulse Test
10
0 www.DataSheet4U.com
0.2
2 0.5 1.0 Drain Current ID (A)
5
10
Static Drain to Source on State Resistance RDS (on) (Ω)
Static Drain to Source on State Resistance vs. Temperature ID = 2 A 16 VGS = 15 V Pulse Test 0.5 A, 1 A Forward Transfer Admittance yfs (S) 20 10 5
Forward Transfer Admittance vs. Drain Current VDS = 20 V Pulse Test –25°C Ta = 25°C 75°C
12
2 1.0 0.5
8
4
0.2 0.1 0.05 0.1
0 –40
40 0 80 120 Case Temperature TC (°C)
160
0.5 1.0 2 0.2 Drain Current ID (A)
5
4
2SK1317
Body to Drain Diode Reverse Recovery Time 5,000 Reverse Recovery Time t rr (ns) Typical Capacitance vs. Drain to Source Voltage 10,000 VGS = 0 f = 1 MHz Capacitance C (pF) 2,000 1,000 500 di/dt = 100 A/µs, Ta = 25°C VGS = 0 Pulse Test Ciss
1,000
200 100
100
Coss Crss
50 0.05 www.DataSheet4U.com
10 0.5 1.0 2 0.1 0.2 Reverse Drain Current IDR (A) 5 0 20 50 10 30 40 Drain to Source Voltage VDS (V)
Dynamic Input Characteristics 1,000 Drain to Source Voltage VDS (A) VDD = 250V 400 V 600 V VGS VDS 20 Gate to Source Voltage VGS (V) 1,000 500 Switching Time t (ns)
Switching Characteristics VGS = 10 V VDD = 30 V PW = 2µs, duty < 1%
• •
800
16
td (off) 200 100 tf 50 tr td (on)
600
12 8
400 VDD = 600 V 200 400 V 250 V
4 ID = 2.5 A 0 100
20 10 0.05
0
40 20 60 80 Gate Charge Qg (nc)
0.1
0.5 1.0 2 0.2 Drain Current ID (A)
5
5
2SK1317
Reverse Drain Current vs. Source to Drain Voltage 5 Reverse Drain Current IDR (A) Pulse Test
4
3
2
1
10 V, 15 V VGS = 0, –5 V
0 www.DataSheet4U.com 0 0.8 2.0 0.4 1.2 1.6 Source to Drain Voltage VSD (V)
Normalized Transient Thermal Impedance γS (t)
Normalized Transient Thermal Impedance vs. Pulse Width 3 TC = 25°C 1.0 D=1 0.5 0.3 0.1 0.2
0.1 0.05
θch–c (t) = γS (t) · θch–c θch–c = 1.25°C/W, TC = 25°C PDM PW 1 D = PW T
0.02
0.03
0.01 10 µ
0.01 Pulse hot 1S
100 µ 1m 10 m Pulse Width PW (s) 100 m
T
10
Switching Time Test Circuit Waveforms Vin Monitor 90% Vout Monitor D.U.T RL 50 Ω Vin 10 V VDD . = . 30 V td (on) Vin Vout 10% 10% 90% tr 90% td (off) 10%
tf
.