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K1317 Dataheets PDF



Part Number K1317
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description 2SK1317
Datasheet K1317 DatasheetK1317 Datasheet (PDF)

2SK1317 Silicon N-Channel MOS FET Application www.DataSheet4U.com High speed power switching Features • • • • • High breakdown voltage V DSS = 1500 V High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1317 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode.

  K1317   K1317


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2SK1317 Silicon N-Channel MOS FET Application www.DataSheet4U.com High speed power switching Features • • • • • High breakdown voltage V DSS = 1500 V High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1317 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% www.DataSheet4U.com 2. Value at TC = 25°C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings 1500 ±20 2.5 7 2.5 100 150 –55 to +150 Unit V V A A A W °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS I GSS 1500 — — 2.0 — 0.45 — — — — — — — — — Typ — — — — 9 0.75 990 125 60 17 70 110 60 0.9 1750 Max — ±1 500 4.0 12 — — — — — — — — — — Unit V µA µA V Ω S pF pF pF ns ns ns ns V ns I F = 2 A, VGS = 0 I F = 2 A, VGS = 0, diF/dt = 100 A/µs I D = 2 A, VGS = 10 V, RL = 15 Ω Test conditions I D = 10 mA, VGS = 0 VGS = ±20 V, VDS = 0 VDS = 1200 V, VGS = 0 I D = 1 mA, VDS = 10 V I D = 2 A, VGS = 15 V *1 I D = 1 A, VDS = 20 V *1 VDS = 10 V, VGS = 0, f = 1 MHz Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1. Pulse test VGS(off) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 2 2SK1317 Power vs. Temperature Derating 120 Channel Dissipation Pch (W) 10 3 Drain Current ID (A) D Maximum Safe Operation Area 10 10 0 µs µs PW C O pe = ra 1 80 1.0 0.3 0.1 10 tio m s m s C n (1 = (T Sh 25 ot ) ) 40 °C 0.03 0.01 10 Operation in this area is limited by RDS (on) Ta = 25°C 50 100 Case Temperature TC (°C) www.DataSheet4U.com 0 150 30 100 300 1,000 3,000 10,000 Drain to Source Voltage VDS (V) Typical Output Characteristics 5 Pulse Test 15 V 2.0 10 V 8V 7V 3 6V Drain Current ID (A) 1.6 Typical Transfer Characteristics 4 Drain Current ID (A) VDS = 20 V Pulse Test 1.2 2 0.8 1 5V VGS = 4 V 75°C TC = 25°C –25°C 0.4 0 20 60 80 40 100 Drain to Source Voltage VDS (V) 0 2 6 8 10 4 Gate to Source Voltage VGS (V) 3 2SK1317 Drain to Source Saturation Voltage VDS (on) (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage 50 Pulse Test 40 ID = 3 A 30 2A 1A 0.5 A 4 12 16 8 Gate to Source Voltage VGS (V) 20 Static Drain to Source on State Resistance RDS (on) (Ω) 50 20 10 5 Static Drain to Source on State Resistance vs. Drain Current VGS = 10 V 15 V 20 2 1.0 0.5 0.1 Pulse Test 10 0 www.DataSheet4U.com 0.2 2 0.5 1.0 Drain Current ID (A) 5 10 Static Drain to Source on State Resistance RDS (on) (Ω) Static Drain to Source on State Resistance vs. Temperature ID = 2 A 16 VGS = 15 V Pulse Test 0.5 A, 1 A Forward Transfer Admittance yfs (S) 20 10 5 Forward Transfer Admittance vs. Drain Current VDS = 20 V Pulse Test –25°C Ta = 25°C 75°C 12 2 1.0 0.5 8 4 0.2 0.1 0.05 0.1 0 –40 40 0 80 120 Case Temperature TC (°C) 160 0.5 1.0 2 0.2 Drain Current ID (A) 5 4 2SK1317 Body to Drain Diode Reverse Recovery Time 5,000 Reverse Recovery Time t rr (ns) Typical Capacitance vs. Drain to Source Voltage 10,000 VGS = 0 f = 1 MHz Capacitance C (pF) 2,000 1,000 500 di/dt = 100 A/µs, Ta = 25°C VGS = 0 Pulse Test Ciss 1,000 200 100 100 Coss Crss 50 0.05 www.DataSheet4U.com 10 0.5 1.0 2 0.1 0.2 Reverse Drain Current IDR (A) 5 0 20 50 10 30 40 Drain to Source Voltage VDS (V) Dynamic Input Characteristics 1,000 Drain to Source Voltage VDS (A) VDD = 250V 400 V 600 V VGS VDS 20 Gate to Source Voltage VGS (V) 1,000 500 Switching Time t (ns) Switching Characteristics VGS = 10 V VDD = 30 V PW = 2µs, duty < 1% • • 800 16 td (off) 200 100 tf 50 tr td (on) 600 12 8 400 VDD = 600 V 200 400 V 250 V 4 ID = 2.5 A 0 100 20 10 0.05 0 40 20 60 80 Gate Charge Qg (nc) 0.1 0.5 1.0 2 0.2 Drain Current ID (A) 5 5 2SK1317 Reverse Drain Current vs. Source to Drain Voltage 5 Reverse Drain Current IDR (A) Pulse Test 4 3 2 1 10 V, 15 V VGS = 0, –5 V 0 www.DataSheet4U.com 0 0.8 2.0 0.4 1.2 1.6 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance γS (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 TC = 25°C 1.0 D=1 0.5 0.3 0.1 0.2 0.1 0.05 θch–c (t) = γS (t) · θch–c θch–c = 1.25°C/W, TC = 25°C PDM PW 1 D = PW T 0.02 0.03 0.01 10 µ 0.01 Pulse hot 1S 100 µ 1m 10 m Pulse Width PW (s) 100 m T 10 Switching Time Test Circuit Waveforms Vin Monitor 90% Vout Monitor D.U.T RL 50 Ω Vin 10 V VDD . = . 30 V td (on) Vin Vout 10% 10% 90% tr 90% td (off) 10% tf .


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