HFP730

www.DataSheet4U.com Shantou Huashan Electronic Devices Co.,Ltd. HFP730 N-Channel Enhancement Mode Field Effect Transistor █ General Description these power MOSFETs is designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. And DC-DC&DC-AC Converters for Telecom,Industrial and Consumer Environment TO-220 █ Features 5.5A, 400V, RDS(on) <1.0Ω@VGS = 10 V Fast switching 100% avalanche tested Improved dv/dt capability Equivalent Type:IRF730 1- G 2-D 3-S █ Maximum Ratings（Ta=25℃ unless otherwise specified） T stg —— Storage Temperature ------------------------------------------------------ - 55~150 ℃ T j —— Operating Junction Temperature -------------------------------------------------- 150 ℃ DataSheet4U.com V DSS —— Drain-Source Voltage ----------------------------------------------------------400V DataShee VDGR —— Drain-Gate Voltage (RGS=20kΩ) -------------------------------------------------------VGSS —— Gate-Source Voltage -----------------------------------------------------------------------ID —— Drain Current (Continuous) ------------------------------------------------------------------- 400V ±20V 5.5A PD —— Maximum Power Dissipation ------------------------------------------------------------- 73W IAR —— Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, d < 1%) ---------------------------------------------------- 5.5 A EAS—— Single Pulse Avalan...