DIM100WHS12-E000

www.DataSheet4U.com DIM100WHS12-E000 DIM100WHS12-E000 Half Bridge IGBT Module PDS5710-1.1 January 2004 FEATURES I I I I Trench Gate Field Stop Technology Low Conduction Losses Low Switching Losses 10µs Short Circuit Withstand KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 1200V 1.7V 100A 200A APPLICATIONS I I I Motor Drives Wind Turbines UPS Systems 7(E2) 6(G2) 1(E1C2) 2(E2) 3(C1) The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 600V to 3300V and currents up to 3600A. The DIM100WHS12-E000 is a half bridge 1200V, DataSheet4U.com n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus full 10µs short circuit withstand. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety. 4(G1) 5(E1) DataSh Fig. 1 Half bridge circuit diagram ee ORDERING INFORMATION Order As: DIM100WHS12-E000 Note: When ordering, please use the complete part number. Outline type code: W (See package details for further information) Fig. 2 Module Outline Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 1/8 www.dynexsemi.com DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com DIM100WHS12-E000 ABSOLUTE...