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STP7N80Z Dataheets PDF



Part Number STP7N80Z
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description N-Channel MOSFET
Datasheet STP7N80Z DatasheetSTP7N80Z Datasheet (PDF)

www.DataSheet4U.com N-CHANNEL 800V - 1.3Ω - 6.1A TO-220/TO-220FP/I2PAK Zener-Protected PowerMESH™ III MOSFET TYPE STP7NC80Z/FP STB7NC80Z-1 s s STP7NC80Z - STP7NC80ZFP STB7NC80Z-1 VDSS 800V 800V RDS(on) < 1.5Ω < 1.5Ω ID 6.1 A 6.1 A 3 2 1 s s s TYPICAL RDS(on) = 1.3Ω EXTREMELY HIGH dv/dt AND CAPABILITY GATE TO - SOURCE ZENER DIODES 100% AVALANCHE TESTED VERY LOW GATE INPUT RESISTANCE GATE CHARGE MINIMIZED TO-220 TO-220FP I2PAK (Tabless TO-220) 1 2 3 DESCRIPTION The third generation o.

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www.DataSheet4U.com N-CHANNEL 800V - 1.3Ω - 6.1A TO-220/TO-220FP/I2PAK Zener-Protected PowerMESH™ III MOSFET TYPE STP7NC80Z/FP STB7NC80Z-1 s s STP7NC80Z - STP7NC80ZFP STB7NC80Z-1 VDSS 800V 800V RDS(on) < 1.5Ω < 1.5Ω ID 6.1 A 6.1 A 3 2 1 s s s TYPICAL RDS(on) = 1.3Ω EXTREMELY HIGH dv/dt AND CAPABILITY GATE TO - SOURCE ZENER DIODES 100% AVALANCHE TESTED VERY LOW GATE INPUT RESISTANCE GATE CHARGE MINIMIZED TO-220 TO-220FP I2PAK (Tabless TO-220) 1 2 3 DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-toback Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety DataSheet4U.com of single-switch applications. APPLICATIONS s SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION s WELDING EQUIPMENT ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID I DM (1) PTOT IGS VESD(G-S) dv/dt VISO Tstg Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100° C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate-source Current Gate source ESD(HBM-C=100pF, R=15KΩ) Peak Diode Recovery voltage slope Insulation Winthstand Voltage (DC) Storage Temperature -–65 to 150 6.1 3.8 24 135 1.08 ± 50 3 3 2000 Value STP(B)7NC80Z(-1) 800 800 ± 25 6.1(*) 3.8(*) 24(*) 40 0.32 STP7NC80ZFP V V V A A A W W/ °C mA KV V/ns V °C Unit DataSh ee Tj Max. Operating Junction Temperature November 2000 (•)Pulse width limited by safe operating area 150 (1)ISD ≤6.1A, di/dt ≤ 100A/µs, V DD ≤ V(BR)DSS, Tj ≤ TJMAX °C (2).Limited only by maximum temperature allowed 1/11 DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com STP7NC80Z/FP/STP7NC80Z-1 THERMAL DATA TO-220 / I PAK Rthj-case Rthj-amb Rthc-sink Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose 0.93 30 0.1 300 TO-220FP 3.13 °C/W °C/W °C/W °C AVALANCHE CHARACTERISTICS Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Max Value 6.1 275 Unit A mJ ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS Parameter Drain-source Breakdown Voltage Test Conditions ID = 250 µA, VGS = 0 ID = 1 mA, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 ° C VGS = ±20V Min. 800 0.9 1 50 ±10 Typ. Max. Unit V V/°C µA µA µA ∆BVDSS/∆TJ Breakdown Voltage Temp. Coefficient IDSS Zero Gate Voltage Drain Current (V GS = 0) Gate-body Leakage Current (VDS = 0) IGSS m et4U.co DataSheet4U.com DataSh Min. 3 Typ. 4 1.3 Max. 5 1.5 Unit V Ω ee ON (1) Symbol VGS(th) R DS(on) ID(on) Parameter Gate Threshold Voltage Static Drain-source.


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