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N-CHANNEL 800V - 1.3Ω - 6.1A TO-220/TO-220FP/I2PAK Zener-Protected PowerMESH™ III MOSFET
TYPE STP7NC80Z/FP STB7NC80Z-1
s s
STP7NC80Z - STP7NC80ZFP STB7NC80Z-1
VDSS 800V 800V
RDS(on) < 1.5Ω < 1.5Ω
ID 6.1 A 6.1 A
3 2 1
s s s
TYPICAL RDS(on) = 1.3Ω EXTREMELY HIGH dv/dt AND CAPABILITY GATE TO - SOURCE ZENER DIODES 100% AVALANCHE TESTED VERY LOW GATE INPUT RESISTANCE GATE CHARGE MINIMIZED
TO-220
TO-220FP
I2PAK (Tabless TO-220)
1
2
3
DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-toback Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety DataSheet4U.com of single-switch applications. APPLICATIONS s SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION s WELDING EQUIPMENT ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID I DM (1) PTOT IGS VESD(G-S) dv/dt VISO Tstg Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100° C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate-source Current Gate source ESD(HBM-C=100pF, R=15KΩ) Peak Diode Recovery voltage slope Insulation Winthstand Voltage (DC) Storage Temperature -–65 to 150 6.1 3.8 24 135 1.08 ± 50 3 3 2000 Value STP(B)7NC80Z(-1) 800 800 ± 25 6.1(*) 3.8(*) 24(*) 40 0.32 STP7NC80ZFP V V V A A A W W/ °C mA KV V/ns V °C Unit
DataSh
ee
Tj Max. Operating Junction Temperature November 2000 (•)Pulse width limited by safe operating area
150 (1)ISD ≤6.1A, di/dt ≤ 100A/µs, V DD ≤ V(BR)DSS, Tj ≤ TJMAX °C (2).Limited only by maximum temperature allowed 1/11
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STP7NC80Z/FP/STP7NC80Z-1
THERMAL DATA
TO-220 / I PAK Rthj-case Rthj-amb Rthc-sink Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose 0.93 30 0.1 300 TO-220FP 3.13 °C/W °C/W °C/W °C
AVALANCHE CHARACTERISTICS
Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Max Value 6.1 275 Unit A mJ
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF
Symbol V(BR)DSS Parameter Drain-source Breakdown Voltage Test Conditions ID = 250 µA, VGS = 0 ID = 1 mA, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 ° C VGS = ±20V Min. 800 0.9 1 50 ±10 Typ. Max. Unit V V/°C µA µA µA
∆BVDSS/∆TJ Breakdown Voltage Temp. Coefficient IDSS Zero Gate Voltage Drain Current (V GS = 0) Gate-body Leakage Current (VDS = 0)
IGSS
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Min. 3 Typ. 4 1.3 Max. 5 1.5 Unit V Ω
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ON (1)
Symbol VGS(th) R DS(on) ID(on) Parameter Gate Threshold Voltage Static Drain-source.