KTC3875S

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES Excellent hFE Linearity : hFE(0.1mA)/hFE(2mA)=0.95(Typ.). High hFE : hFE=70 700. Low Noise : NF=1dB(Typ.), 10dB(Max.). Complementary to KTA1504S. Suffix U : Qualified to AEC-Q101. ex) KTC3875S-GR-RTK/PU Suffix E : EOS(Electrical Over Stress) Capacity Enhanced Product. ex) KTC3875S-GR-RTK/PE Suffix UE : Qualified to AEC-Q101 and EOS(Electrical Over Stress) Capacity Enhanced Product. ex) KTC3875S-GR-RTK/PUE MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg RATING 60 50 5 150 30 150 150 -55 150 UNIT V V V mA mA mW KTC3875S EPITAXIAL PLANAR NPN TRANSISTOR E L BL DIM MILLIMETERS A 2.93+_ 0.20 B 1.30+0.20/-0.15 A G H D 23 C 1.30 MAX D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 J 0.13+0.10/-0.05 Q K 0.00 ~ 0.10 PP L 0.55 M 0.20 MIN N 1.00+0.20/-0.10 C N K J P7 Q 0.1 MAX M 1. EMITTER 2. BASE 3. COLLECTOR SOT-23 Marking hFE Rank ALType Name Lot No. ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current ICBO VCB=60V, IE=0 Emitter Cut-off Current IEBO VEB=5V, IC=0 DC Current Gain hFE(Note) VCE=6V, IC=2mA Collector-Emitter Saturation Voltage VCE(sat) IC=100mA, IB=10mA Base-Emitter Saturation Voltage VBE(s...