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SSP2N60B/SSS2N60B
SSP2N60B/SSS2N60B
600V N-Channel MOSFET
General Description
These N-Channel enha...
www.DataSheet4U.com
SSP2N60B/SSS2N60B
SSP2N60B/SSS2N60B
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.
Features
2.0A, 600V, RDS(on) = 5.0Ω @VGS = 10 V Low gate charge ( typical 12.5 nC) Low Crss ( typical 7.6 pF) Fast switching 100% avalanche tested Improved dv/dt capability Typical Characteristics
D
G G DS
TO-220
SSP Series
GD S
TO-220F
SSS Series
DataShee
S
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Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL
TC = 25°C unless otherwise noted
Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
SSP2N60B 600 2.0 1.3 6.0 ± 30
(Note 2) (Note 1) (Note 1) (Note 3)
SSS2N60B 2.0 * 1.3 * 6.0 * 120 2.0 5.4 5.5
Units V A A A V mJ A mJ V/ns W W/°C °C °C
Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C)
- Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
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