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STW54NK30Z
N-CHANNEL 300V - 0.052Ω - 54A TO-247 Zener-Protected SuperMESH™ MOSFET
Table 1: General Features
TYPE STW54NK30Z
s s s s s s
Figure 1: Package
ID 54 A Pw 300 W
BVDSS 300 V
RDS(on) < 0.060 Ω
TYPICAL RDS(on) = 0.052 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY
TO-247
3 2 1
DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special Figure 2: Internal Schematic Diagram care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series DataSheet4U.com complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
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APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING DC CHOPPERs s IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC
Table 2: Order Codes
SALES TYPE STW54NK30Z MARKING W54NK30Z PACKAGE TO-247 PACKAGING TUBE
DataSheet4U.com
February 2005
Rev. 1 1/10
DataSheet 4 U .com
www.DataSheet4U.com
STW54NK30Z
Table 3: Absolute Maximum ratings
Symbol VDS VDGR VGS ID ID IDM ( ) PTOT VESD(G-S) dv/dt (1) Tj Tstg Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate source ESD(HBM-C=100pF, R=1.5KΩ) Peak Diode Recovery voltage slope Operating Junction Temperature Storage Temperature Value 300 300 ± 30 54 34 200 300 2.38 6000 4.5 -55 to 150 Unit V V V A A A W W/°C V V/ns °C
( ) Pulse width limited by safe operating area (1) ISD ≤ 54A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. (*) Limited only by maximum temperature allowed
Table 4: Thermal Data
Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 0.42 30 300 °C/W °C/W °C
et4U.com Table 5: Avalanche Characteristics
Symbol IAR EAS Parameter
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Max Value 54 400 A
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Unit
Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V)
mJ
Table 6: Gate-Source Zener Diode
Symbol BVGSO Parameter Gate-Source Breakdown Voltage Test Conditions Igs=± 1mA (Open Drain) Min. 30 Typ. Max. Unit V
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of .