STW5NB100

www.DataSheet4U.com ® STW5NB100 N - CHANNEL 1000V - 4Ω - 4.3A - TO-247 PowerMESH™ MOSFET PRELIMINARY DATA TYPE STW5NB100 s s s s s s s V DSS 1000 V R DS(on) < 4.4 Ω ID 4.3 A TYPICAL RDS(on) = 4 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED LOW INTRINSIC CAPACITANCE GATE CHARGE MINIMIZED REDUCED VOLTAGE SPREAD 3 2 1 DESCRIPTION TO-247 Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and INTERNAL SCHEMATIC DIAGRAM DataSheet4U.com dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLY (SMPS) s DC-AC CONVERTER FOR WELDING EQUIPMENT AND UNINTERRUPTABLE POWER SUPPLY AND MOTOR DRIVE s DataShee ABSOLUTE MAXIMUM RATINGS Symbol V DS VDGR V GS ID ID I DM ( ) P tot Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) Total Dissipation at T c = 25 C Derating Factor dv/dt (1) T stg Tj June 1998 Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature o o Value 1000 1000 ± 30 4.3 2.7 17 160 1.28 4 -65 ...