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TB31296FT

Toshiba Semiconductor

Bluetooth RF IC

www.DataSheet4U.com Preliminary TOSHIBA SiGe-BiCMOS LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TB31296FT TB31296FT Bl...


Toshiba Semiconductor

TB31296FT

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Description
www.DataSheet4U.com Preliminary TOSHIBA SiGe-BiCMOS LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TB31296FT TB31296FT Bluetooth RF IC FEATURES BlueRF RXMODE1 Power ConsumptionF TX mode 27.0mA (Typ.) RX mode 42.0mA (Typ.) Operating Voltage RangeF 2.7V ~ 3.5 V Small PackageF FBGA 48in Build-in LNA Build-in VCO Build-in PA F 0dBm output ( typ. controllable) External PA control voltage supply for Class1 Very slight current consumption in Deep Sleep mode BLOCK DIAGRAM PA_CONT GNDTX1 TXout VccTX RXin GNDRXPA1 MIX_C MIXout ANTSW ANTSWX GNDTX2 NC VccRX GNDRXPA2 NC Iref1 DA LFIL1 VccVCO C DataSheet4U.com PLL LNA MIX VccIF1 IFref2 DataShee Doubler GNDVCO ResetX VCO FLLLPF BPF FLLRC GNDIF1 TXLPF LD NC RSSI LPF FLLGC DET AFout BSX VccPLL Serial data cont. ADC GNDIF2 Cin XOin GNDPLL2 SSTB SDATA RFbus1 RFbus2 PASW LFIL2 XOout Vdd SCLK GNDPLL1 Cout BB13M RSSI VccIF2 (Top View) The information contained herein is subject to change without notice. -The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. -TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfuncti...




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