Bluetooth RF IC
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Preliminary TOSHIBA SiGe-BiCMOS LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TB31296FT
TB31296FT
Bl...
Description
www.DataSheet4U.com
Preliminary TOSHIBA SiGe-BiCMOS LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TB31296FT
TB31296FT
Bluetooth RF IC
FEATURES BlueRF RXMODE1 Power ConsumptionF TX mode 27.0mA (Typ.) RX mode 42.0mA (Typ.) Operating Voltage RangeF 2.7V ~ 3.5 V Small PackageF FBGA 48in Build-in LNA Build-in VCO Build-in PA F 0dBm output ( typ. controllable) External PA control voltage supply for Class1 Very slight current consumption in Deep Sleep mode BLOCK DIAGRAM
PA_CONT
GNDTX1
TXout
VccTX
RXin
GNDRXPA1
MIX_C
MIXout
ANTSW
ANTSWX
GNDTX2
NC
VccRX GNDRXPA2
NC
Iref1
DA
LFIL1 VccVCO C
DataSheet4U.com PLL
LNA MIX
VccIF1 IFref2
DataShee
Doubler
GNDVCO ResetX
VCO
FLLLPF
BPF
FLLRC GNDIF1
TXLPF
LD NC
RSSI LPF
FLLGC
DET
AFout
BSX
VccPLL
Serial data cont.
ADC
GNDIF2
Cin
XOin
GNDPLL2
SSTB
SDATA
RFbus1
RFbus2
PASW
LFIL2
XOout
Vdd
SCLK
GNDPLL1
Cout
BB13M
RSSI
VccIF2
(Top View)
The information contained herein is subject to change without notice. -The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. -TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfuncti...
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