SDU30N02

www.DataSheet4U.com S DU/D30N02 S amHop Microelectronics C orp. May,2004 ver1.1 N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 20V F E AT UR E S S uper high dense cell design for low R DS (ON ). ID 25A R DS (ON) ( m W ) Max 20 @ V G S = 4.5V R ugged and reliable. TO-252 and TO-251 P ackage. D D G S G D S G S DU S E R IE S TO-252AA(D-P AK) S DD S E R IE S TO-251(l-P AK) S DataSheet4U.com ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous -P ulsed a S ymbol V DS V GS @ TJ=125 C ID IDM IS PD T J , T S TG Limit 20 12 25 42 30 50 -55 to 175 Unit V V A A A W C Drain-S ource Diode Forward C urrent Maximum P ower Dissipation @ Tc=25 C Operating and S torage Temperature R ange THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-C ase DataSheet4U.com R JC R JA 1 3 50 C /W C /W Thermal R esistance, Junction-to-Ambient DataSheet 4 U .com www.DataSheet4U.com S DU/D30N02 E LE CTR ICAL CHAR ACTE R IS TICS (T C =25 C unless otherwise noted) Parameter OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS b S ymbol Condition V GS = 0V, ID = 250uA V DS = 16V, V GS = 0V V GS = 8V, V DS = 0V V DS = V GS , ID = 250uA V GS = 4.5V, ID = 20A Min Typ Max Unit 20 1 100 V uA nA V ON CHAR ACTE R IS TICS a Gate Threshold Voltage Drain-S o...