SDU30N03L

www.DataSheet4U.com SDU/D30N03L SamHop Microelectronics Corp. JULY, 2002 N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 30V FEATURES Super high dense cell design for low RDS(ON). ID 30A RDS(ON) (mW ) TYP 11.5 @ VGS = 10V 17 @ VGS = 4.5V Rugged and reliable. TO-252 and TO-251 Package. D D G S G D S G SDU SERIES TO-252AA(D-PAK) SDD SERIES TO-251(l-PAK) S ABSOLUTE MAXIMUM RATINGS (TC=25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed a Symbol DataSheet4U.com VDS VGS @TJ=125 C ID IDM IS PD TJ, TSTG Limit 30 20 30 90 30 50 0.3 -55 to 175 Unit V V A A A W W/ C C DataShee Drain-Source Diode Forward Current Maximum Power Dissipation @Tc=25 C Derate above 25 C Operating and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 1 R JC R JA 3 50 C/W C/W DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com SDU/D30N03L ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted) Parameter OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BVDSS IDSS IGSS VGS(th) RDS(ON) ID(ON) gFS b Symbol Condition VGS = 0V, ID = 250uA VDS = 24V, VGS = 0V VGS = +/-20V, VDS = 0V VDS = VGS, ID = 250uA VGS = 10V, ID =15A VGS = 4.5V, ID = 12A VDS = 10V, VGS = 10V VDS = 10V, ID = 20A DataSheet4U.com Min Typ Max Unit 30 10 V uA +/-100 nA 1 1.5 11.5 17 40 30 1200 53...