Document
Final data
SPP03N60C3, SPB03N60C3 SPA03N60C3
VDS @ Tjmax RDS(on) ID 650 1.4 3.2 V Ω A
Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated
www.DataSheet4U.com • Extreme
P-TO220-3-31
P-TO263-3-2
P-TO220-3-1
dv/dt rated
1 P-TO220-3-31 2 3
• High peak current capability • Improved transconductance
• P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
Type SPP03N60C3 SPB03N60C3 SPA03N60C3
Package P-TO220-3-1 P-TO263-3-2
Ordering Code Q67040-S4401 Q67040-S4391
Marking 03N60C3 03N60C3 03N60C3
P-TO220-3-31 -
Maximum Ratings Parameter Continuous drain current
TC = 25 °C TC = 100 °C
Symbol ID 3.2 2 ID puls EAS EAR IAR VGS VGS Ptot Tj , Tstg 9.6 100 0.2 3.2 ±20 ±30 38
Value SPP_B SPA
Unit A 3.21) 21) 9.6 100 0.2 3.2 ±20 ±30 29.7 W °C A V A mJ
Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse
ID=2.4A, VDD =50V
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=3.2A, VDD =50V
Avalanche current, repetitive tAR limited by Tjmax Gate source voltage static Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C Operating and storage temperature
-55...+150
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2003-10-02
Final data Maximum Ratings Parameter Drain Source voltage slope
V DS = 480 V, I D = 3.2 A, Tj = 125 °C
SPP03N60C3, SPB03N60C3 SPA03N60C3
Symbol dv/dt
Value 50
Unit V/ns
Thermal Characteristics
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Parameter Thermal resistance, junction - case Thermal resistance, junction - case, FullPAK Thermal resistance, junction - ambient, leaded Thermal resistance, junction - ambient, FullPAK SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 3) Soldering temperature, 1.6 mm (0.063 in.) from case for 10s 4)
Symbol min. RthJC RthJC_FP RthJA RthJA_FP RthJA Tsold -
Values typ. 35 max. 3.3 4.1 62 80 62 260
Unit K/W
°C
Electrical Characteristics, at T j=25°C unless otherwise specified Parameter Symbol Conditions min. Drain-source breakdown voltage V(BR)DSS V GS=0V, ID=0.25mA Drain-Source avalanche V(BR)DS V GS=0V, ID=3.2A breakdown voltage Gate threshold voltage Zero gate voltage drain current VGS(th) I DSS
ID=135µA, VGS=VDS V DS=600V, VGS=0V, Tj=25°C Tj=150°C
Values typ. 700 3 0.5 1.26 3.8 10 max. 3.9
Unit V
600 2.1 -
µA 1 70 100 1.4 nA Ω
Gate-source leakage current
I GSS
V GS=30V, VDS=0V V GS=10V, ID=2A Tj=25°C Tj=150°C
Drain-source on-state resistance RDS(on)
Gate input resistance
RG
f=1MHz, open drain
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2003-10-02
Final data Electrical Characteristics Parameter Transconductance Input capacitance www.DataSheet4U.com Output capacitance Reverse transfer capacitance energy related Effective output capacitance, 6) Co(tr) time related Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg td(on) tr td(off) tf Symbol g fs Ciss Coss Crss
V GS=0V, V DS=0V to 480V
SPP03N60C3, SPB03N60C3 SPA03N60C3
Conditions min.
V DS≥2*I D*RDS(on)max, ID=2A V GS=0V, V DS=25V, f=1MHz
Values typ. 3.4 400 150 5 12 26 7 3 64 12 max. 100 20 -
Unit S pF
Effective output capacitance, 5) Co(er)
V DD=350V, V GS=0/10V, ID=3.2A, RG=20Ω
-
ns
V DD=420V, ID=3.2A
-
2 6 13 5.5
17 -
nC
V DD=420V, ID=3.2A, V GS=0 to 10V
V(plateau) V DD=420V, ID=3.2A
V
1Limited only by maximum temperature 2Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 4Soldering temperature for TO-263: 220°C, reflow 5C o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V DSS. 6C o(tr) is a fixed capacitance that gives the same charging time as Coss while V DS is rising from 0 to 80% V DSS.
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2003-10-02
Final data Electrical Characteristics Parameter Inverse diode continuous forward current Inverse www.DataSheet4U.com pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current Peak rate of fall of reverse recovery current Typical Transient Thermal Characteristics Symbol SPP_B Rth1 Rth2 Rth3 Rth4 Rth5 Rth6 0.054 0.103 0.178 0.757 0.682 0.202
Tj P tot (t) C th1 C th2 C th,n
SPP03N60C3, SPB03N60C3 SPA03N60C3
Symbol IS I SM VSD t rr Q rr I rrm di rr/dt
Conditions min.
TC=25°C
Values typ. 1 250 1.8 15 max. 3.2 9.6 1.2 400 -
Unit A
diode direct current,
VGS =0V, I F=IS VR =420V, IF=IS , diF/dt=100A/µs
-
V ns µC A A/µs
Tj=25°C
Value SPA 0.054 0.103 0.178 0.356 0.655 2.535
R th1
Unit K/W
Symbol Cth1 Cth2 Cth3 Cth4 Cth5 Cth6
R th,n T case
Value SPP_B 0.0002034 0.0002963 0.0009103 0.002084 0.024 SPA 0.0002034 0.0002963 0.0009103 0.004434 0.412
Unit
0.00005232 0.00005232 Ws/K
E xternal H eatsink
T am b
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2003-10-02
Final data 1 Power dissipation Ptot = f (TC)
40
SPP03N60C3
SPP03N60C3, SPB03N60C3 S.