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03N60C3 Dataheets PDF



Part Number 03N60C3
Manufacturers Infineon Technologies
Logo Infineon Technologies
Description SPP03N60C3 / SPD03N60C3 / SPA03N60C3
Datasheet 03N60C3 Datasheet03N60C3 Datasheet (PDF)

Final data SPP03N60C3, SPB03N60C3 SPA03N60C3 VDS @ Tjmax RDS(on) ID 650 1.4 3.2 V Ω A Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated www.DataSheet4U.com • Extreme P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 dv/dt rated 1 P-TO220-3-31 2 3 • High peak current capability • Improved transconductance • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute) Type SPP03N60C3 SPB03N60C3 SPA03N60C3 Package P-TO220-3-.

  03N60C3   03N60C3


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Final data SPP03N60C3, SPB03N60C3 SPA03N60C3 VDS @ Tjmax RDS(on) ID 650 1.4 3.2 V Ω A Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated www.DataSheet4U.com • Extreme P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 dv/dt rated 1 P-TO220-3-31 2 3 • High peak current capability • Improved transconductance • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute) Type SPP03N60C3 SPB03N60C3 SPA03N60C3 Package P-TO220-3-1 P-TO263-3-2 Ordering Code Q67040-S4401 Q67040-S4391 Marking 03N60C3 03N60C3 03N60C3 P-TO220-3-31 - Maximum Ratings Parameter Continuous drain current TC = 25 °C TC = 100 °C Symbol ID 3.2 2 ID puls EAS EAR IAR VGS VGS Ptot Tj , Tstg 9.6 100 0.2 3.2 ±20 ±30 38 Value SPP_B SPA Unit A 3.21) 21) 9.6 100 0.2 3.2 ±20 ±30 29.7 W °C A V A mJ Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID=2.4A, VDD =50V Avalanche energy, repetitive tAR limited by Tjmax2) ID=3.2A, VDD =50V Avalanche current, repetitive tAR limited by Tjmax Gate source voltage static Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C Operating and storage temperature -55...+150 Page 1 2003-10-02 Final data Maximum Ratings Parameter Drain Source voltage slope V DS = 480 V, I D = 3.2 A, Tj = 125 °C SPP03N60C3, SPB03N60C3 SPA03N60C3 Symbol dv/dt Value 50 Unit V/ns Thermal Characteristics www.DataSheet4U.com Parameter Thermal resistance, junction - case Thermal resistance, junction - case, FullPAK Thermal resistance, junction - ambient, leaded Thermal resistance, junction - ambient, FullPAK SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 3) Soldering temperature, 1.6 mm (0.063 in.) from case for 10s 4) Symbol min. RthJC RthJC_FP RthJA RthJA_FP RthJA Tsold - Values typ. 35 max. 3.3 4.1 62 80 62 260 Unit K/W °C Electrical Characteristics, at T j=25°C unless otherwise specified Parameter Symbol Conditions min. Drain-source breakdown voltage V(BR)DSS V GS=0V, ID=0.25mA Drain-Source avalanche V(BR)DS V GS=0V, ID=3.2A breakdown voltage Gate threshold voltage Zero gate voltage drain current VGS(th) I DSS ID=135µA, VGS=VDS V DS=600V, VGS=0V, Tj=25°C Tj=150°C Values typ. 700 3 0.5 1.26 3.8 10 max. 3.9 Unit V 600 2.1 - µA 1 70 100 1.4 nA Ω Gate-source leakage current I GSS V GS=30V, VDS=0V V GS=10V, ID=2A Tj=25°C Tj=150°C Drain-source on-state resistance RDS(on) Gate input resistance RG f=1MHz, open drain Page 2 2003-10-02 Final data Electrical Characteristics Parameter Transconductance Input capacitance www.DataSheet4U.com Output capacitance Reverse transfer capacitance energy related Effective output capacitance, 6) Co(tr) time related Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg td(on) tr td(off) tf Symbol g fs Ciss Coss Crss V GS=0V, V DS=0V to 480V SPP03N60C3, SPB03N60C3 SPA03N60C3 Conditions min. V DS≥2*I D*RDS(on)max, ID=2A V GS=0V, V DS=25V, f=1MHz Values typ. 3.4 400 150 5 12 26 7 3 64 12 max. 100 20 - Unit S pF Effective output capacitance, 5) Co(er) V DD=350V, V GS=0/10V, ID=3.2A, RG=20Ω - ns V DD=420V, ID=3.2A - 2 6 13 5.5 17 - nC V DD=420V, ID=3.2A, V GS=0 to 10V V(plateau) V DD=420V, ID=3.2A V 1Limited only by maximum temperature 2Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 4Soldering temperature for TO-263: 220°C, reflow 5C o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V DSS. 6C o(tr) is a fixed capacitance that gives the same charging time as Coss while V DS is rising from 0 to 80% V DSS. Page 3 2003-10-02 Final data Electrical Characteristics Parameter Inverse diode continuous forward current Inverse www.DataSheet4U.com pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current Peak rate of fall of reverse recovery current Typical Transient Thermal Characteristics Symbol SPP_B Rth1 Rth2 Rth3 Rth4 Rth5 Rth6 0.054 0.103 0.178 0.757 0.682 0.202 Tj P tot (t) C th1 C th2 C th,n SPP03N60C3, SPB03N60C3 SPA03N60C3 Symbol IS I SM VSD t rr Q rr I rrm di rr/dt Conditions min. TC=25°C Values typ. 1 250 1.8 15 max. 3.2 9.6 1.2 400 - Unit A diode direct current, VGS =0V, I F=IS VR =420V, IF=IS , diF/dt=100A/µs - V ns µC A A/µs Tj=25°C Value SPA 0.054 0.103 0.178 0.356 0.655 2.535 R th1 Unit K/W Symbol Cth1 Cth2 Cth3 Cth4 Cth5 Cth6 R th,n T case Value SPP_B 0.0002034 0.0002963 0.0009103 0.002084 0.024 SPA 0.0002034 0.0002963 0.0009103 0.004434 0.412 Unit 0.00005232 0.00005232 Ws/K E xternal H eatsink T am b Page 4 2003-10-02 Final data 1 Power dissipation Ptot = f (TC) 40 SPP03N60C3 SPP03N60C3, SPB03N60C3 S.


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