03N60C3

Final data SPP03N60C3, SPB03N60C3 SPA03N60C3 VDS @ Tjmax RDS(on) ID 650 1.4 3.2 V Ω A Cool MOS™ Power Transistor Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated www.DataSheet4U.com Extreme P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 dv/dt rated 1 P-TO220-3-31 2 3 High peak current capability Improved transconductance P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute) Type SPP03N60C3 SPB03N60C3 SPA03N60C3 Package P-TO220-3-1 P-TO263-3-2 Ordering Code Q67040-S4401 Q67040-S4391 Marking 03N60C3 03N60C3 03N60C3 P-TO220-3-31 - Maximum Ratings Parameter Continuous drain current TC = 25 °C TC = 100 °C Symbol ID 3.2 2 ID puls EAS EAR IAR VGS VGS Ptot Tj , Tstg 9.6 100 0.2 3.2 ±20 ±30 38 Value SPP_B SPA Unit A 3.21) 21) 9.6 100 0.2 3.2 ±20 ±30 29.7 W °C A V A mJ Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID=2.4A, VDD =50V Avalanche energy, repetitive tAR limited by Tjmax2) ID=3.2A, VDD =50V Avalanche current, repetitive tAR limited by Tjmax Gate source voltage static Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C Operating and storage temperature -55...+150 Page 1 2003-10-02 Final data Maximum Ratings Parameter Drain Source voltage slope V DS = 480 V, I D = 3.2 A, Tj = 125 °C SPP03N60C3, SPB03N60C3 SPA03N60C3 Symbol dv/dt Value 50 Unit V/ns Thermal Characteristics www.DataSheet4U.com Parameter Thermal resistance, junction - case Thermal resistance, j...