Document
Final data
SPP03N60C3, SPB03N60C3 SPA03N60C3
VDS @ Tjmax RDS(on) ID 650 1.4 3.2 V Ω A
Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated
www.DataSheet4U.com • Extreme
P-TO220-3-31
P-TO263-3-2
P-TO220-3-1
dv/dt rated
1 P-TO220-3-31 2 3
• High peak current capability • Improved transconductance
• P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
Type SPP03N60C3 SPB03N60C3 SPA03N60C3
Package P-TO220-3-1 P-TO263-3-2
Ordering Code Q67040-S4401 Q67040-S4391
Marking 03N60C3 03N60C3 03N60C3
P-TO220-3-31 -
Maximum Ratings Parameter Continuous drain current
TC = 25 °C TC = 100 °C
Symbol ID 3.2 2 ID puls EAS EAR IAR VGS VGS Ptot Tj , Tstg 9.6 100 0.2 3.2 ±20 ±30 38
Value SPP_B SPA
Unit A 3.21) 21) 9.6 100 0.2 3.2 ±20 ±30 29.7 W °C A V A mJ
Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse
ID=2.4A, VDD =50V
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=3.2A, VDD =50V
Avalanche current, repetitive tAR limited by Tjmax Gate source voltage static Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C Operating and storage temperature
-55...+150
Page 1
2003-10-02
Final data Maximum Ratings Parameter Drain Source voltage slope
V DS = 480 V, I D = 3.2 A, Tj = 125 °C
SPP03N60C3, SPB03N60C3 SPA03N60C3
Symbol dv/dt
Value 50
Unit V/ns
Thermal Characteristics
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Parameter Thermal resistance, junction - case Thermal resistance, junction - case, FullPAK Thermal resistance, junction - ambient, leaded Thermal resistance, junction - ambient, FullPAK SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 3) Soldering temperature, 1.6 mm (0.063 in.) from case for 10s 4)
Symbol min. RthJC RthJC_FP RthJA RthJA_FP RthJA Tsold -
Values typ. 35 max. 3.3 4.1 62 80 62 260
Unit K/W
°C
Electrical Characteristics, at T j=25°C unless otherwise specified Parameter Symbol Conditions min. Drain-source breakdown voltage V(BR)DSS V GS=0V, ID=0.25mA Drain-Source avalanche V(BR)DS V GS=0V, ID=3.2A breakdown voltage Gate threshold voltage Zero gate voltage drain current VGS(th) I DSS
ID=135µA, VGS=VDS V DS=600V, VGS=0V, Tj=25°C Tj=150°C
Values typ. 700 3 0.5 1.26 3.8 10 max. 3.9
Unit V
600 2.1 -
µA 1 70 100 1.4 nA Ω
Gate-source leakage current
I GSS
V GS=30V, VDS=0V V GS=10V, ID=2A Tj=25°C Tj=150°C
Drain-source on-state resistance RDS(on)
Gate input resistance
RG
f=1MHz, open drain
Page 2
2003-10-02
Final data Electrical Characteristics Parameter Transconductance Input capacitance www.DataSheet4U.com Output capacitance Reverse transfer capacitance energy related Effective output capacitance, 6) Co(tr) time related Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg td(on) tr td(off) tf Symbol g fs Ciss Coss Crss
V GS=0V, V DS=0V to 480V
SPP03N60C3, SPB03N60C3 SPA03N60.