MS2200

www.DataSheet4U.com 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS2200 RF AND MICROWAVE TRANSISTORS UHF PULSED APPLICATIONS Features 500 Watts @ 250 µ Sec Pulse Width, 10% Duty Cycle Refractory Gold Metallization Emitter Ballasting And Low Resistance For Reliability and Ruggedness Infinite VSWR Capability At Specified Operating Conditions Input Matched, Common Base Configuration Balanced Configuration DESCRIPTION: The MS2200 is a hermetically sealed, gold metallized silicon NPN DataSheet4U.com pulse power transistor mounted in a common base balanced configuration. The MS2200 is designed for applications requiring high peak power and low duty cycles within the frequency range of 400 – 500 MHz. DataShee ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter Value Unit VCBO VCES VEBO IC PDISS TJ T STG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature 65 65 3.5 43.2 1167 +200 -65 to +150 V V V A W °C °C Thermal Data RTH(j-c) DataSheet4U.com Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. Junction-Case Thermal Resistance 0.15 ° C/W DataSheet 4 U .com www.DataSheet4U.com MS2200 ELECTRICAL SPECIFICATIONS (Tcase = 25 ° C) STATIC Symbol Test Conditions Min. Value Typ....