MS2207

www.DataSheet4U.com MS2207 RF & MICROWAVE TRANSISTORS L-BAND AVIONICS APPLICATIONS Features 1090 MHz 50 VOLTS 15:1 VSWR CAPABILITY INPUT / OUTPUT MATCHING POUT = 400 WATTS GP = 8.0 dB MINIMUM COMMON BASE CONFIGURATION DESCRIPTION: The MS2207 is a high power NPN bipolar transistor specifically designed for TCAS and Mode-S driver applications. This device is designed for operation DataSheet4U.com under moderate pulse width and duty cycle pulse conditions and is capable of withstanding 15:1 output VSWR at rated conditions. DataShee ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol PDISS IC VCC TJ TSTG Parameter Value 880 24 55 200 -65 to +200 Unit W A V °C °C Power Dissipation Device Current Collector Supply Voltage Junction Temperature Storage Temperature Thermal Data RTH(J-C) Junction-case Thermal Resistance 0.17 °C/W DataSheet4U.com 053-7113 Rev - 11-2002 DataSheet 4 U .com www.DataSheet4U.com MS2207 ELECTRICAL SPECIFICATIONS (Tcase = 25°C) Symbol BVCBO BVEBO BVCER Ices HFE IC = 50 mA IE = 15 mA IC = 50 mA VBE = 50 V VCE = 5 V STATIC Test Conditions Min. IE = 0 mA IC = 0 mA RBE = 10Ω VCE = 0 V IC = 5 A 65 3.5 65 --10 Value Typ. ----------- Max. ------30 200 Unit V V V mA --- DYNAMIC Symbol POUT ηC GP Conditions f = 1090 MHz f = 1090 MHz f = 1090 MHz Pulse Width = 32µS Test Conditions Min. PIN = 63W PIN = 63W PIN = 63W VCC = 50V VCC = 50V DataSheet4U.com VCC = 50V 400 45 8.0 Value Typ. ------- Max. ------- Unit W % dB et4U.com DataShee Du...