MS2208

www.DataSheet4U.com 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS2208 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATION Features HERMETIC METAL/CERAMIC PACKAGE LOW THERMAL RESISTANCE 10:1 LOAD VSWR CAPABILITY BALLASTED OVERLAY GEOMETRY COMMON EMITTER CONFIGURATION DESCRIPTION: THE MS2208 DEVICE IS A HIGH POWER CLASS C TRANSISTOR DataSheet4U.com SPECIFICALLY DESIGNED FOR L-BAND AVIONIC APPLICATIONS INVOLVING HIGH PULSE BURST DUTY CYCLES. THE DEVICE IS CAPABLE OF OPERATION OVER A WIDE RANGE OF PULSE WIDTHS, DUTY CYCLES AND TEMPERATURES. e DataShe ABSOLUTE MAXIMUM RATINGS (Tcase = 25° C) Symbol PDISS IC VCC TJ T STG Parameter Power Dissipation* (TC≤100ºC) Device Current * Collector Supply Voltage* Junction Temperature Storage Temperature Value 1360 27 55 250 -65 to +200 Unit W A V °C °C Thermal Data RTH(J-C) Junction - Case Thermal Resistance *Applies only to rated RF amplifier operation 0.11 °C/W DataSheet4U.com MSC0926.PDF 10-09-98 DataSheet 4 U .com www.DataSheet4U.com MS2208 ELECTRICAL SPECIFICATIONS (Tcase (Tcase = 25° C) STATIC Symbol Bvebo Bvcbo Bvces Ices HFE IE = 30 mA IC = 50 mA IC = 50 mA VBE = 50 mA VCE = 5.0 V Test Conditions Min. IC=0 mA IC=0 mA VBE=0 V VCE=50 V IC=1 A 3.0 70 70 --10 Value Typ. ----------- Max. ------40 200 Unit V V V mA B DYNAMIC Symbol Pout ηc GP Load Mismatch Conditions Test Conditions Min. Pin = 70W Pout Pout f=1090 MHz f=1090 MHz f=1090 MHz VCC=50V VCC=50V DataSheet4...