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MS2209...
www.DataSheet4U.com
140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855
MS2209
RF & MICROWAVE
TRANSISTORS AVIONICS APPLICATION
Features
REFRACTORY/GOLD METALIZATION LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY EMITTER SITE BALLASTED
DESCRIPTION:
THE MS2209 AVIONICS POWER
TRANSISTOR IS A BROADBAND, HIGH PEAK PULSE POWER DEVICE SPECIFICALLY DESIGNED FOR AVIONICS APPLICATIONS REQUIRING DataSheet4U.com BROAD BANDWIDTH WITH MODERATED DUTY CYCLE AND PULSE WIDTH CONSTRAINTS SUCH AS GROUND/SHIP BASED DME/TACAN. THIS DEVICE IS ALSO CAPABLE OF SPECIALIZED APPLICATIONS INCLUDING JTIDS WITH REDUCED POWER UNDER PULSE FORMATS UTILIZING SHORT PULSE WIDTHS AND HIGH BURST OR OVERALL DUTY CYCLES.
DataShee
ABSOLUTE MAXIMUM RATINGS (Tcase = 25° C)
Symbol
PDISS IC VCC TJ T STG
Parameter Power Dissipation* (TC≤100ºC)
Device Current * Collector Supply Voltage* Junction Temperature Storage Temperature
Value
220 7.0 50 250 -65 to +200
Unit
W A V °C °C
Thermal Data
RTH(J-C) Junction - Case Thermal Resistance *Applies only to rated RF amplifier operation 0.80 °C/W
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MSC0930.PDF 10-13-98
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MS2209
ELECTRICAL SPECIFICATIONS (Tcase (Tcase = 25° C) STATIC
Symbol
Bvebo Bvcbo Bvcer Icbo HFE IE = 10 mA IC = 40 mA IC = 40 mA VCB = 50V VCE = 5.0 V
Test Conditions Min.
IC=0 mA IE=0 mA RBE=10Ω IC=2 A 3.0 65 65 --20
Value Typ.
-----------
Max.
------12 120
Unit
V V V mA B
DYNAMIC...