MS2211

www.DataSheet4U.com 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS2211 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS Features REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 5:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 6.0 W MIN. WITH 9.3 dB Gain DESCRIPTION: The MS2211 is designed for specialized avionics applications, DataSheet4U.com including JTIDS, where power is provided under pulse formats utilizing short pulse widths and high burst or overall duty cycles. DataShee ABSOLUTE MAXIMUM RATINGS (Tcase = 25° C) Symbol PDISS IC VCC TJ TSTG Power Dissipation * (TC ≤ 75° C) Device Current * Collector - Supply Voltage * Junction Temperature (Pulsed RF Operation) Storage Temperature Parameter Value 25 0.9 32 250 - 65 to + 200 Unit W A V °C °C Thermal Data RTH(j-c) Junction-Case Thermal Resistance * 7.0 ° C/W * Applies only to rated RF amplifier operation DataSheet4U.com MSC0919.PDF 9-23-98 DataSheet 4 U .com www.DataSheet4U.com MS2211 STATIC ELECTRICAL SPECIFICATIONS (Tcase (Tcase = 25° C) Symbol BVCBO BVEBO BVCER Test Conditions Min. IC = 1 mA IE = 1 mA IC = 5 mA VBE = 0V VCE = 5V IE = 0 mA IC = 0 mA RBE =10Ω VCE = 28 V IC = 250 mA 48 3.5 48 ---30 Value Typ. ---------------- Max. ---------0.5 300 Unit V V V mA ---- ICES hFE et4U.com DataShee DataSheet4U.com DYNAMIC Symbol POUT VC GP Note: Test Conditions Min....