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MS2214 Dataheets PDF



Part Number MS2214
Manufacturers Advanced Power Technology
Logo Advanced Power Technology
Description RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS
Datasheet MS2214 DatasheetMS2214 Datasheet (PDF)

www.DataSheet4U.com 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS2214 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS Features • • • • • • • GOLD METALLIZATION EMITTER SITE BALLASTED Pout = 85 W MINIMUM Gp = 7.5 dB OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE LOW THERMAL RESISTANCE DESCRIPTION: The MS2214 is a silicon NPN bipolar transistor designed for avionics applications with high duty cycle requirements. Gold metallization and emitter.

  MS2214   MS2214



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www.DataSheet4U.com 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS2214 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS Features • • • • • • • GOLD METALLIZATION EMITTER SITE BALLASTED Pout = 85 W MINIMUM Gp = 7.5 dB OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE LOW THERMAL RESISTANCE DESCRIPTION: The MS2214 is a silicon NPN bipolar transistor designed for avionics applications with high duty cycle requirements. Gold metallization and emitter DataSheet4U.com ballasting provides long term reliability under JTIDS and similar pulse formats. DataShee ABSOLUTE MAXIMUM RATINGS Symbol VCC IC PDISS TJ T STG (Tcase = 25° C) Value 40 8.0 300 +250 - 65 to + 200 Parameter Collector-Supply Voltage* Device Current* Power Dissipation* Junction Temperature Storage Temperature Unit V A W °C °C Thermal Data RTH(j-c) Junction-Case Thermal Resistance* 0.75 ° C/W * Applies only to rated RF operation. DataSheet4U.com Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. DataSheet 4 U .com www.DataSheet4U.com MS2214 STATIC ELECTRICAL SPECIFICATIONS (Tcase = 25 ° C) Symbol BVCBO BVCER BVEBO Test Conditions IC = 25mA IC = 25 mA IE = 10 mA VCE = 35 V VCE = 5 V IE = 0 mA RBE = 10 Ω IC = 0 mA VB E = 0 V IC = 2A Min. 55 55 3.5 ---20 Value Typ. ---------------- Max. ---------20 200 Unit V V V mA ---- ICES hFE DYNAMIC Test Conditions f = 960 - 1215 MHz PIN = 15 W f = 960 - 1215 MHz PIN = 15 W f = 960 - 1215 MHz PIN = 15 W et4U.com Symbol Min. 85 40 7.5 Value Typ. ---------- Max. ---------- Unit W % dB DataShee POUT ηC GP Note: VCC = 35 V DataSheet4U.com VCC = 35 V VCC = 35 V Pulse Format: 6.4 µS on 6.6 µS off, repeat for 3.3 ms. Duty Cycle: Burst 49.2%, overall 20.8% IMPEDANCE DATA: FREQUENCY 960 MHz 1090 MHz 1215 MHz Pin = 15W Vcc = 35V Zin 3.0 + j5.0 5.5 + j5.5 5.3 + j4.5 Zcl 7.0 - j5.0 3.7 - j1.8 3.0 - j2.5 DataSheet4U.com Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. DataSheet 4 U .com www.DataSheet4U.com MS2214 TEST CIRCUIT et4U.com DataShee DataSheet4U.com DataSheet4U.com Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. DataSheet 4 U .com www.DataSheet4U.com MS2214 PACKAGE MECHANICAL DATA et4U.com DataSheet4U.com DataSheet4U.com Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. DataSheet 4 U .com .


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