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140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855
MS2213...
www.DataSheet4U.com
140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855
MS2213
RF & MICROWAVE
TRANSISTORS SPECIALITY AVIONICS/JTIDS APPLICATIONS
Features
REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 15:1 VSWR CAPABILITY LOW RF THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 30 W MIN. WITH 7.8 dB Gain
DESCRIPTION:
The MS2213 device is a high power Class C
transistor specifically designed for JTIDS pulsed output and driver applications. The device is capable of operation over a wide range of pulse widths, duty cycles and temperatures and is capable of withstanding 15:1 output VSWR at rated RF conditions. Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency. The MS2213 is supplied in the hermetic metal/ceramic package with internal input matching structures.
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ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
PDISS IC VCC TJ TSTG Power Dissipation * (TC ≤ 85° C) Device Current * Collector - Supply Voltage * Junction Temperature (Pulsed RF Operation) Storage Temperature
Parameter
Value
75 3.5 40 250 - 65 to + 200
Unit
W A V °C °C
Thermal Data
RTH(j-c)
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Junction-Case Thermal Resistance
2.2
° C/W
* Applies only to rated RF amplifier operation
MSC0920.PDF 9-23-98
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MS2213
STATIC
ELECTRICAL SPECIFICATIONS (Tcase ...