MS2267

www.DataSheet4U.com 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS2267 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS Features 960 – 1215MHz 50 VOLTS 5:1 VSWR CAPABILITY @ RATED CONDITIONS INPUT/OUTPUT MATCHING POUT = 250 WATTS GP = 8.0 dB MINIMUM COMMON BASE CONFIGURATION DESCRIPTION: The MS2267 is a high power Class C NPN transistor specifically designed for TACAN/DME applications. DataSheet4U.com DataShee This device is capable of operation under moderate pulse width and duty cycles. Low thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency. The MS2267 utilizes an emitter ballasted die geometry capable of operating into a 5:1 VSWR @ 1.0 dB overdrive. ABSOLUTE MAXIMUM RATINGS (Tcase = 25° C) Symbol PDISS IC Vcc TJ T STG Device Current* Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature Parameter Power Dissipation* (T C ≤ 90° C) Value 575 20 50 250 -65 to +200 Unit W A V °C °C Thermal Data RTH(J-C) Junction-case Thermal Resistance∗ (1) 0.28 ° C/W * Applies only to rated RF amplifier operation (1) Infra-red scan of hot spot junction temperature at rated RF operating conditions DataSheet4U.com Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. DataSheet 4...