EPITAXIAL TRANSISTOR. 2SD560 Datasheet

2SD560 Datasheet PDF, Equivalent


Part Number

2SD560

Description

NPN SILICON EPITAXIAL TRANSISTOR

Manufacture

NEC

Total Page 6 Pages
PDF Download
Download 2SD560 Datasheet PDF


2SD560 Datasheet
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DATA SHEET
SILICON POWER TRANSISTOR
2SD560
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
The 2SD560 is a mold power transistor developed for low-
frequency power amplifiers and low-speed switching. This transistor is
ideal for direct driving from the IC output of devices such as pulse
motor drivers and relay drivers, and PC terminals.
FEATURES
• C-to-E reverse diode inserted
• Low collector saturation voltage
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Base current (DC)
Total power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC(DC)
IC(pulse)
IB(DC)
PT
Tj
Tstg
Conditions
Ratings Unit
150 V
100 V
7.0 V
Data±S5h.0eet4U.cAom
PW 10 ms,
duty cycle 50%
±8.0
A
0.5 A
TC = 25°C
30 W
TA = 25°C
1.5 W
150 °C
55 to +150 °C
ORDERING INFORMATION
Ordering Name
2SD560
Package
TO-220AB
(TO-220AB)
INTERNAL EQUIVALENT CIRCUIT
DataShee
1. Base
2. Collector
3. Emitter
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The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14863EJ3V0DS00 (3rd edition)
Date Published April 2002 N CP(K)
Printed in Japan
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©
21090928

2SD560 Datasheet
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ELECTRICAL CHARACTERISTICS (TA = 25°C)
Parameter
Symbol
Conditions
Collector cutoff current
DC current gain
Collector saturation voltage
Base saturation voltage
Turn-on time
Storage time
Fall time
ICBO
hFE1
hFE2
VCE(sat)
VBE(sat)
ton
tstg
tf
VCB = 100 V, IE = 0 A
VCE = 2.0 V, IC = 3.0 ANote
VCE = 2.0 V, IC = 5.0 ANote
IC = 3.0 A, IB = 3.0 mANote
IC = 3.0 A, IB = 3.0 mANote
IC = 3.0 A, RL = 16.7 ,
IB1 = IB2 = 3.0 mA, VCC 50 V
Refer to the test circuit.
Note Pulse test PW 350 µs, duty cycle 2%
hFE CLASSIFICATION
Marking
hFE1
MB
2,000 to 5,000
LB
3,000 to 7,000
KB
5,000 to 15,000
SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT
2SD560
MIN.
2,000
500
TYP.
6,000
MAX.
1.0
15,000
0.9 1.5
1.6 2.0
1.0
3.5
1.2
Unit
µA
V
V
µs
µs
µs
et4U.com
Base current
waveform
DataSheet4U.com
Collector current
waveform
DataShee
DataSheet4U.com
2
DataSheet4 U .com
Data Sheet D14863EJ3V0DS


Features Datasheet pdf www.DataSheet4U.com DATA SHEET SILICON POWER TRANSISTOR 2SD560 NPN SILICON E PITAXIAL TRANSISTOR (DARLINGTON CONNECT ION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD560 is a mold power transistor developed for lowfrequency power amplifiers and low-s peed switching. This transistor is idea l for direct driving from the IC output of devices such as pulse motor drivers and relay drivers, and PC terminals. ORDERING INFORMATION Ordering Name 2SD5 60 Package TO-220AB FEATURES • C-to- E reverse diode inserted • Low collec tor saturation voltage (TO-220AB) ABS OLUTE MAXIMUM RATINGS (TA = 25°C) Para meter Collector to base voltage Collect or to emitter voltage Emitter to base v oltage Collector current (DC) Collector current (pulse) Base current (DC) Tota l power dissipation Junction temperatur e Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse) IB(DC) PT Tj Tstg TC = 25°C TA = 25°C PW ≤ 10 ms, du ty cycle ≤ 50% Conditions Ratings 150 100 7.0 ±8.0 0.5 30 1.5 150 −55 to.
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