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Semiconductor
STK0160D
Advanced Power MOSFET
SWITCHING REGULATOR APPLICATIONS Features
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Semiconductor
STK0160D
Advanced Power MOSFET
SWITCHING
REGULATOR APPLICATIONS Features
High Voltage: BVDSS=600V(Min.) Low Crss : Crss=4.3pF(Typ.) Low gate charge : Qg=4.5nC(Typ.) Low RDS(on) :RDS(on)=9.4Ω(Max.)
Type NO. STK0160D Marking STK0160 Package Code D-PAK
Ordering Information
Outline Dimensions
unit : mm
6.50~6.70 5.10~5.50
DataSheet4U.com
1.18 Max.
2.10~2.50
DataShee
7.77~7.97
1.15 Max.
0.83 Max. 2.30 Typ. 2.30 Typ.
0.55 Max.
1
2
3
PIN Connections 1. Gate 2. Drain 3. Source
DataSheet4U.com
KSD-T6O003-000
1
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STK0160D
Absolute maximum ratings
Characteristic
Drain-source voltage Gate-source voltage Drain current (DC) Drain current (Pulsed)
*
(Tc=25°C)
Symbol
VDSS VGSS ID (Tc=25℃) (Tc=125℃) IDP PD ② ② ① ① IAS EAS IAR EAR TJ Tstg
Rating
600 ±30 1.0 0.70 4.0 28 1.0 22 1.0 2.5 150 -55~150
Unit
V V A A A W A mJ A mJ °C
Drain Power dissipation Avalanche current (Single) Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy Junction temperature Storage temperature range
* Limited by maximum junction temperature
Characteristic
Junction-case Junction-ambient
Symbol
Rth(J-C) DataSheet4U.com Rth(J-a)
Typ.
-
Max
4.46 83.3
Unit
℃/W
Thermal et4U.com resistance
DataShee
DataSheet4U.com
KSD-T6O003-000
2
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STK0160D
Electrical Characteristics
Characteristic
Drain-source breakdown voltage Gate-threshold voltage...