2SB1375. B1375 Datasheet

B1375 Datasheet PDF, Equivalent


Part Number

B1375

Description

2SB1375

Manufacture

Toshiba Semiconductor

Total Page 5 Pages
PDF Download
Download B1375 Datasheet PDF


B1375 Datasheet
TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SB1375
Audio Frequency Power Amplifier
2SB1375
Unit: mm
Low saturation voltage: VCE (sat) = 1.5 V (max)
(IC = 2 A, IB = 0.2 A)
High power dissipation: PC = 25 W (Tc = 25°C)
Collector metal (fin) is covered with mold resin
Complementary to 2SD2012
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
60
60
7
3
0.5
2.0
25
150
55 to 150
V
V
V
A
A
W
°C
°C
JEDEC
JEITA
TOSHIBA
2-10R1A
Weight: 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1 2006-11-21

B1375 Datasheet
Electrical Characteristics (Tc = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
Test Condition
ICBO
IEBO
V (BR) CEO
hFE (1)
hFE (2)
VCE (sat)
VBE
fT
Cob
VCB = 60 V, IE = 0
VEB = 7 V, IC = 0
IC = 50 mA, IB = 0
VCE = 5 V, IC = 0.5 A
VCE = 5 V, IC = 2 A
IC = 2 A, IB = 0.2 A
VCE = 5 V, IC = 0.5 A
VCE = 5 V, IC = 0.5 A
VCB = 10 V, IE = 0, f = 1 MHz
Marking
2SB1375
Min Typ. Max Unit
― ― −10 μA
― ― −10 μA
60
V
100 320
15 ― ―
― −1.0 1.5
V
― −0.75 1.0
V
9 MHz
50 pF
B1375
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2 2006-11-21


Features Datasheet pdf TOSHIBA Transistor Silicon PNP Triple Di ffused Type 2SB1375 Audio Frequency Pow er Amplifier 2SB1375 Unit: mm • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −2 A, IB = −0.2 A) High power dissipation: PC = 25 W (T c = 25°C) • Collector metal (fin) is covered with mold resin • Complement ary to 2SD2012 Absolute Maximum Rating s (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-bas e voltage Collector current Base curr ent Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range VCBO VCEO V EBO IC IB PC Tj Tstg −60 −60 −7 −3 −0.5 2.0 25 150 −55 to 150 V V V A A W °C °C JEDEC ― JEITA TOSHIBA 2-10R1A Weight: 1.7 g (ty p.) Note: Using continuously under hea vy loads (e.g. the application of high temperature/current/voltage and the sig nificant change in temperature, etc.) m ay cause this product to decrease in the reliability significantly even if the operating conditions.
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