SI426DQ

www.DataSheet4U.com Si6426DQ N-Channel 2.5-V (G-S) Rated MOSFET Product Summary VDS (V) 20 rDS(on) (W) 0.035 @ VGS = 4.5 V 0.04 @ VGS = 2.5 V ID (A) "5.4 "4.9 D TSSOP-8 D S S G 1 2 3 4 D Si6426DQ 8 7 6 5 D S S D G Top View S* N-Channel MOSFET DataSheet4U.com *Source Pins 2, 3, 6, and 7 must be tied common. DataShee Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit 20 "8 "5.4 "4.2 "30 1.25 1.5 1.0 –55 to 150 Unit V A W _C Thermal Resistance Ratings Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 10 sec. Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70174. A SPICE Model data sheet is available for this product (FaxBack document #70545). Symbol RthJA Limit 83 Unit _C/W DataSheet4U.com Siliconix S-49534—Rev. A, 06-Oct-97 DataSheet 4 U .com 1 www.DataSheet4U.com Si6426DQ Specifications (TJ = 25_C Unless Otherwise Noted) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current VGS(th) IGSS IDSS VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "8 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V,...