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RF3165

RF Micro Devices

3V 1700MHz LINEAR POWER AMPLIFIER MODULE

www.DataSheet4U.com Preliminary 0 Typical Applications • 3V CDMA Korean-PCS Handset • 3V CDMA2000/1XRTT K-PCS Handset ...


RF Micro Devices

RF3165

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Description
www.DataSheet4U.com Preliminary 0 Typical Applications 3V CDMA Korean-PCS Handset 3V CDMA2000/1XRTT K-PCS Handset RF3165 3V 1700MHz LINEAR POWER AMPLIFIER MODULE 3V CDMA2000/1X-EV-DO K-PCS Handset Spread-Spectrum System Product Description 3.00 -A-B- The RF3165 is a high-power, high-efficiency linear amplifier module specifically designed for 3V handheld systems. The device is manufactured on an advanced third generation GaAs HBT process, and was designed for use as the final RF amplifier in 3V IS-95/CDMA 2000 1X handheld digital cellular equipment, spread-spectrum systems, and other applications in the 1750MHz to 1780MHz band. The RF3165 has a digital control line for low power applications to lower quiescent current. The RF3165 is assembled in at 16-pin, 3mmx3mm, QFN package. 1.00 0.80 0.10 C 3.00 0.10 C 0.10 C 0.10 C Shaded areas represent pin 1. -C- 1.45 +0.10 -0.15 Dimensions in mm. SEATING PLANE SCALE: NONE 0.50 TYP. 1.45 +0.10 -0.15 0.10 C 0.08 C 0.05 0.00 DataShee DataSheet4U.com 0.30 TYP. 0.18 0.10 M C A B 0.50 TYP. 0.30 Optimum Technology Matching® Applied Si BJT Si Bi-CMOS InGaP/HBT 9 Package Style: QFN, 16-Pin, 3x3 GaAs HBT SiGe HBT GaN HEMT GaAs MESFET Si CMOS SiGe Bi-CMOS Features Input Internally Matched@50 Ω Output Internally Matched 28dBm Linear Output Power 40% Peak Linear Efficiency 28dB Linear Gain -50dBc ACPR @ 1.25MHz VCC1 16 15 14 13 RF IN 1 GND 2 VMODE 3 Bias VREG 4 NC IM IM 12 VCC2 11 VCC2 10...




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