N-Channel Enhancement Mode Power MOSFET
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AF85N03
N-Channel Enhancement Mode Power MOSFET Features
- Low Gate Charge - Simple Drive Require...
Description
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AF85N03
N-Channel Enhancement Mode Power MOSFET Features
- Low Gate Charge - Simple Drive Requirement - Fast Switching - RoHS Compliant - Pb Free Plating Product
General Description
The TO-252 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version is available for low-profile applications.
Product Summary
BVDSS (V) 30 RDS(ON) (mΩ) 6 ID (A) 75
Pin Assignments
(Front View) 3 2 1 D G S
Pin Descriptions
Pin Name S G DataSheet4U.com D
Description Source Gate Drain
DataShee
Ordering information
A X Feature F :MOSFET PN 85N03 X X Package D: TO-252 Packing Blank : Tube or Bulk A : Tape & Reel
Block Diagram
D S
G
This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of DataSheet4U.com this product. No rights under any patent accompany the sale of the product.
Rev. 1.0 Aug 10, 2005 1/5
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AF85N03
N-Channel Enhancement Mode Power MOSFET Absolute Maximum Ratings
Symbol VDS VGS ID IDM PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS=4.5V Pulsed Drain Current (Note 1) Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range TC=25ºC TC=100ºC TC=25ºC Rating 30 ±...
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