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Preliminary Data Sheet
Repetitive Avalanche and dv/dt Rated MOSFET Transistor P-Channel
200Volt, 0.505 Ω , RAD Hard MOSFET Package: SMD-0.5 Product Summary
Hex Size 3 Technology RAD Hard BV DSS -200V RDS (on) 0.505 Ω ID -8.0A
2N7522 R5
Absolute Maximum Ratings
Parameter ID @ VGS = -12V, TC = 25°C ID @ VGS = -12V, TC = 100°C PD @ TC = 25°C VGS EAS IAR EAR TJ Continuous Drain Current Continuous Drain Current Power Dissipation Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current DataSheet4U.com Repetitive Avalanche Energy Operating Junction Range Value -8.0 -5.0 75 ±20 75 -8.0 7.5 -55 to 150 Units A A W V mJ A mJ °C
DataShee
Pre-Irradiation Electrical Characteristics @ T J = 25° C (Unless Otherwise Specified)
Parameter BVDSS RDS(on) VGS (th) IDSS IDSS IGSS IGSS Qg Drain-to-Source Breakdown Voltage Static Drain-to-Source On-State Resistance Gate Threshold Voltage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Min -200 -2.0 Typ. Max 0.505 -4.0 -10 -25 -100 100 43 Units V Ω V µA µA nA nA nC Test Conditions VGS=0V, ID=-1.0mA
VGS=-12V, ID=-5.0A
VDS=VGS, ID=-1.0mA VDS= -160V, VGS=0V
VDS =-160V, TJ=125°C
VGS=-20V VGS=20V
VGS=-12V, ID=-8.0A
Thermal Resistance
Parameter RthJC Junction-to-Case Min Typ. Max 1.67 Units °C/W 01/23/01 Test Conditions
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