RVT1000

www.DataSheet4U.com VT RVT HIGH VOLTAGE 50 mA SILICON RECTIFIERS SMALL SIZE MOLDED PACKAGE PRV 10,000 TO 15,000 VOLTS FAST RECOVERY (R_SERIES) AVALANCHE CHARACTERISTICS LOW LEAKAGE EDI Type VT1000 VT1200 VT1500 RVT1000 RVT1200 RVT1500 PRV Volts 10,000 12,000 15,000 10,000 12,000 15,000 DataSheet4U.com o REVERSE RECOVERY TIME (Fig.4) 100 ns max. 100 ns max. 100 ns max. DataShee ELECTRICAL CHARACTERISTICS (at TA =25 o C Unless Otherwise Specified) Average Rectified Forward Current @ 50 C, IO Max. Peak Surge Current, IFSM (8.3 ms) Max. Forward Voltage Drop @ 50 mA, V F Max. DC Reverse Current @ PRV and 25 C, IR Max. DC Reverse Current @ PRV and100 C, I R Ambient Operating Temperature Range, T A Storage Temperature Range, T STG o o 50 mA 5 Amp 28Volts 1 25 A A -55 to + 125oC -55 to + 150oC NOTES: 1.It is recommended that a proper heat sink be used on the terminals of this device between the body and soldering point to prevent damage from excess heat. 2.If operated over 10,000v/inch in length, devices should be immersed in oil or re - encapsulated. EDI reserves the right to change these specifications at any time without notice. DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com VT RVT FIG.1 OUTPUT CURRENT vs AMBIENT TEMPERATURE 100 100 FIG.2 NON- REPETITIVE SURGE CURRENT 0.1SEC 1.0SEC % RATED FWD CURRENT % MAXIMUM SURGE 75 75 50 50 25 25 0 0 25 50 75 100 O 0 125 150 1 2 3 4 5 6 7 8 9 10 20 30 40 50 60 AMBIENT TEMPERATURE ( C) CYCLES(60 Hz) FIG.3 A...