MT28F400B3

www.DataSheet4U.com 4Mb SMART 3 BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F004B3 MT28F400B3 3V Only, Dual Supply (Smart 3) FEATURES Seven erase blocks: 40-Pin 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Four main memory blocks Smart 3 technology (B3): 3.3V ±0.3V VCC 3.3V ±0.3V VPP application programming 5V ±10% VPP application/production programming1 Compatible with 0.3µm Smart 3 device Advanced 0.18µm CMOS floating-gate process Address access time: 80ns 100,000 ERASE cycles Industry-standard pinouts Inputs and outputs are fully TTL-compatible Automated write and erase algorithm Two-cycle WRITE/ERASE sequence Byte- or word-wide READ and WRITE DataSheet4U.com (MT28F400B3, 256K x 16/512K x 8) Byte-wide READ and WRITE only (MT28F004B3, 512K x 8) TSOP and SOP packaging options TSOP Type I 48-Pin TSOP Type I 44-Pin SOP DataShee OPTIONS Timing 80ns access Configurations 512K x 8 256K x 16/512K x 8 Boot Block Starting Word Address Top (3FFFFh) Bottom (00000h) Operating Temperature Range Commercial (0ºC to +70ºC) Extended (-40ºC to +85ºC) Packages 44-pin SOP (MT28F400B3) 48-pin TSOP Type I (MT28F400B3) 40-pin TSOP Type I (MT28F004B3) NOTE: MARKING -8 MT28F004B3 MT28F400B3 T B None ET SG WG VG GENERAL DESCRIPTION The MT28F004B3 (x8) and MT28F400B3 (x16/x8) are nonvolatile, electrically block-erasable (flash), programmable memory devices containing 4,194,304 bits organized as 262,144 words (16 bits) or 524,288 bytes...