MT28F320A18

www.DataSheet4U.com 2 MEG x 16 1.8V ENHANCED+ BOOT BLOCK FLASH MEMORY FLASH MEMORY FEATURES MT28F320A18 Low Voltage, Extended Temperature 0.15µm Process Technology Ball Assignment 32Mb block architecture 47-Ball FBGA Seventy-one erasable blocks: Eight 4K-word parameter blocks Sixty-three 32K-word main memory blocks VCC, VCCQ, VPP voltages* 1.65V (MIN), 1.95V (MAX) VCC, VCCQ 1 2 3 4 5 6 7 8 0.9V (MIN), 1.95V (MAX) VPP (in-system WP# A4 VPP A8 A19 A11 A7 A A13 PROGRAM/ERASE) 12V ±5% (HV) VPP tolerant (factory programming A18 A2 WE# A17 A10 RP# A5 B A14 compatibility) Random access time: 70ns @ 1.65V VCC A20 A1 A9 A6 A12 A3 C A15 Low power consumption (VCC = 1.8V) Asynchronous Read < 18mA DQ2 A0 DQ5 DQ8 DQ14 CE# D A16 DQ11 Write/Erase < 40mA (MAX) Standby < 50µA (MAX) DQ3 VSS DQ6 DQ9 DQ0 E VCCQ DQ15 DQ12 Automatic power saving feature (APS) Enhanced write and erase suspend options DataSheet4U.com VCC DQ13 DQ10 DQ7 DQ1 OE# F VSS DQ4 ERASE-SUSPEND-to-READ PROGRAM-SUSPEND-to-READ ERASE-SUSPEND-to-PROGRAM Dual 64-bit chip protection registers for security purTop View poses (Ball Down) Cross-compatible command support Extended command set Note: See page 6 for Ball Description table. Common flash interface See page 36 for mechanical drawing. PROGRAM/ERASE cycle 100,000 WRITE/ERASE cycles per block (VPP = VPP1) OPTIONS MARKING *An extended voltage range of 1.65V–2.20V for Vcc and VccQ, and 0.9V–2.20V for Vpp is available upon request. A voltage range...