MT2854M16B1LL

www.DataSheet4U.com ADVANCE‡ 64Mb: x16, x32 SYNCFLASH MEMORY SYNCFLASH® MEMORY FEATURES MT28S4M16B1LL – 1 Meg x 16 x 4 banks MT28S2M32B1LL – 512K x 32 x 4 banks 125 MHz SDRAM-compatible read timing Fully synchronous; all signals registered on positive edge of system clock Internal pipelined operation; column address can be changed every clock cycle Internal banks for hiding row access Programmable burst lengths: 1, 2 , 4, 8, or full page (read) 1, 2, 4, or 8 (write) LVTTL-compatible inputs and outputs 3.0V–3.6V VCC, 1.65V–1.95V VCCQ Additional VHH hardware protect mode (RP#) Supports CAS latency of 1, 2, and 3 Four-bank architecture supports true concurrent operation with zero latency Read any bank while programming or erasing any other bank Deep power-down mode: 50µA (MAX) Cross-compatible Flash memory command set DataSheet4U.com Operating temperature range of -40oC to +85oC PIN ASSIGNMENT (Top View) 90-Ball FBGA – 2 Meg x 32 1 A B C D E F G H J K L M N P R DQ26 2 DQ24 3 VSS 7 Vcc 8 DQ23 9 DQ21 DQ28 VccQ VSSQ VccQ VSSQ DQ19 VSSQ DQ27 DQ25 DQ22 DQ20 VccQ VSSQ DQ29 DQ30 DQ17 DQ18 VccQ VccQ DQ31 NC NC DQ16 VssQ VSS DQM3 A3 A2 DQM2 Vcc A4 A5 A6 A10 A0 A1 A7 A8 VccP NC BA1 NC CLK CKE A9 BA0 CS# RAS# DQM1 RP# DNU CAS# WE# DQM0 VccQ DQ8 Vss Vcc DQ7 VSSQ VSS DQ10 DQ9 DQ6 DQ5 VccQ DataShee VSSQ DQ12 DQ14 DQ1 DQ3 VccQ DQ11 VccQ VSSQ VccQ VSSQ DQ4 DQ13 DQ15 Vss Vcc DQ0...