CSC3255

www.DataSheet4U.com Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON EPITAXIAL POWER TRANSISTOR CSC3255 TO-220 High-Speed Switching Applications. Complementary CSA1291 ABSOLUTE MAXIMUM RATINGS(Ta=25deg C) DESCRIPTION SYMBOL VALUE VCBO 80 Collector -Base Voltage VCEO 60 Collector -Emitter Voltage VEBO 5.0 Emitter Base Voltage IC 10.0 Collector Current ICP 12.0 Peak 40.0 Collector Power Dissipation @ Tc=25 deg C PC Tj 150 Junction Temperature Tstg -55 to +150 Storage Temperature Range DataSheet4U.com Specified) ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless DESCRIPTION SYMBOL TEST CONDITION MIN TYP VCEO IC=1mA, IB=0 60 Collector Emitter Voltage VCBO IC=1mA, IE=0 80 Collector Base Voltage VEBO IE=1mA, IC=0 5.0 Emitter Base Voltage ICBO VCB=40V, IE=0 Collector Cut off Current IEBO VBE=4V,IC=0 Emitter Cut off Current VCE(Sat) IC=5A, IB=0.25A Collector Emitter Saturation Voltage hFE IC=1A, VCE=2V 70 DC Current Gain Dynamic Characteristics ft VCE=5V, IC=1A, 100 Transition Frequency Switching Time ton VCC=20V, VBE=5V 0.1 Turn on time tstg IB1=1B2=.0.25A, IC=5A, 0.5 Storage time tf Pw=20us, Duty Cycle=1% 0.1 Fall time hFE Classification Q : 70 -140 ; R : 100 - 200 ; S : 160 - 250 ; UNIT V V V A A W deg C deg C MAX 100 100 0.6 250 - DataShee UNIT V V V uA uA V MHz us us us DataSheet4U.com Continental Device India Limited Data Sheet Page 1 of 3 DataSheet 4 U .com www.DataSheet4U.com TO-220 Plastic Package C E D IM A B C D E F G H J K L...