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Semiconductor
STC9018N
NPN Silicon Transistor
Description
• High frequency low noise amplifier ap...
www.DataSheet4U.com
Semiconductor
STC9018N
NPN Silicon
Transistor
Description
High frequency low noise amplifier application VHF band amplifier application
Features
Low noise figure : NF = 4dB(Typ.) at f=100MHz High transition frequency fT = 800MHz(Typ.)
Ordering Information
Type NO. STC9018N Marking STC9018 Package Code TO-92N
Outline Dimensions
4.20~4.40
4.20~4.40
unit : mm
2.25 Max.
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0.52 Max.
13.50~14.50
0.90 Max. 1.27 Typ.
2.14 Typ.
1 2 3
3.55 Typ
3.09~3.29
0.40 Max.
PIN Connections 1. Emitter 2. Base 3. Collector
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KSD-T0C030-000
1
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STC9018N
Absolute Maximum Ratings
Characteristic
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature range
Ta=25°C
Symbol
VCBO VCEO VEBO IC IE PC TJ Tstg
Rating
40 30 4 20 -20 500 150 -55~150
Unit
V V V mA mA mW °C °C
Electrical Characteristics
Characteristic
Collector cut-off current Emitter cut-off current DC current gain Transition frequency Noise figure Power gain
Ta=25°C
Symbol
ICBO IEBO hFE* fT NF GPE
Test Condition
VCB=40V, IE=0 VEB=4V, IC=0 VCE=5V, IC=1mA VCE=10V, IE=-8mA VCB=6V,IE=-1mA, f=100MHz
Min. Typ. Max.
54 800 4 20 0.1 0.1 198 -
Unit
µA µA MHz dB
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* : hFE rank / F : 54~80, G : 70~108, H : 97~146, I : 132~198. DataSheet4U.com
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KSD-T0C030-000
2
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