(T718N / T719N) SILICON CONTROLLED RECTIFIER
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European PowerSemiconductor and Electronics Company
Marketing Information T 718 N T 719 N
ø36 ø36...
Description
www.DataSheet4U.com
European PowerSemiconductor and Electronics Company
Marketing Information T 718 N T 719 N
ø36 ø36 C
C
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DataShee
A ø36 3,5+0,1 x 3,5 deep on both sides HK plug 4,8 x 0,8
ø36 ø3,5 x 2 deep on both sides
A
HK 4,8 x 0,8
2
G plug 2,8 x 0,8
G plug 2,8 x 0,8 4
DataSheet4U.com
VWK Aug. 1996
DataSheet 4 U .com
www.DataSheet4U.com
Periodische Vorwärts- und RückwärtsSpitzensperrspannung Vorwärts-Stoßspitzensperrspannung Rückwärts-Stoßspitzensperrspannung Durchlaßstrom-Grenzeffektivwert Dauergrenzstrom Stoßstrom-Grenzwert Grenzlastintegral Kritische Stromsteilheit
Elektrische Eigenschaften Höchstzulässige Werte
T 718 N T 719 N
repetitive peak forward off-state and reverse voltages non-repetitive peak forward off-state voltage non-repetitive peak reverse voltage RMS on-state current average on-state current surge current I2 t-value critical rate of rise of on-state current
Electrical properties Maximum rated values
tvj = -40°C...tvj max tvj = -40°C...tvj max tvj = +25°C...tvj max tc = 85°C tc = 64°C tvj = 25°C, tp = 10 ms tvj = tvj max, tp = 10 ms tvj = 25°C, tp = 10 ms tvj = tvj max, tp = 10 ms vD ≤ 67%, vDRM, f = 50 Hz
VDRM, VRRM VDSM = VDRM VRSM ITRMSM ITAVM ITSM I2 t (diT/dt)cr
600 800 1000 1200 1400 1600* 600 800 1000 1200 1400 1600* 700 900 1100 1300 1500 1700 1500 719 955 14500 12500 1,051 . 106 0,781 . 106 120
V V V A A A A A A2s A2s A/µs
Kritische Spannungssteilheit
critical rate of rise of off-state voltage
vL = 10 V...
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