STD60NF06

www.DataSheet4U.com N-CHANNEL 60V - 0.014Ω - 60A DPAK STripFET™ II POWER MOSFET TYPE STD60NF06 s s s s STD60NF06 VDSS 60 V RDS(on) < 0.016 Ω ID 60A TYPICAL RDS(on) = 0.014Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION 3 1 DPAK (Suffix “T4”) DESCRIPTION This Power Mosfet series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and INTERNAL SCHEMATIC DIAGRAM gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements. DataSheet4U.com APPLICATIONS s HIGH-EFFICIENCY DC-DC CONVERTERS s UPS AND MOTOR CONTROL s AUTOMOTIVE DataSh ee ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (l) PTOT dv/dt (1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Operating Junction Temperature Value 60 60 ± 20 60 42 240 110 0.73 4 – 55 to 175 (1) I SD≤ 60A, di/dt≤200 A/µs, VDD≤ 24V, Tj≤TjMAX Unit V V V A A A W W/°C V/ns °C (q) Pulse width limited by safe operating area October 2002 1/9 DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com STD60N...