STD60NF55L

www.DataSheet4U.com N-CHANNEL 55V - 0.012Ω - 60A DPAK STripFET™ II POWER MOSFET TYPE STD60NF55L s s s STD60NF55L VDSS 55V RDS(on) < 0.015Ω ID 60A TYPICAL RDS(on) = 0.012Ω LOW THRESHOLD DRIVE ADD SUFFIX “T4” FOR ORDERING IN TAPE & REEL 3 1 DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.. DPAK TO-252 INTERNAL SCHEMATIC DIAGRAM DataSheet4U.com APPLICATIONS s AUTOMOTIVE s MOTOR CONTROL DataShee ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (l) PTOT dv/dt (1) EAS (2) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Operating Junction Temperature Value 55 55 ± 15 60 42 240 110 0.73 16 400 – 55 to 175 (1)ISD ≤40A, di/dt ≤350A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. (2) Starting Tj=25°C, ID=30A, VDD=20V Unit V V V A A A W W/°C V/ns mJ °C (q) Pulse width limited by safe operating area April 2002 1/9 DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com STD60NF55L THERMAL DATA Rthj-case Rthj-amb Tl ...