STD6NC40

www.DataSheet4U.com N-CHANNEL 400V - 0.75Ω - 5A - DPAK / IPAK PowerMesh™II MOSFET TYPE STD6NC40 s s s s s STD6NC40 VDSS 400V RDS(on) <1Ω ID 5A s TYPICAL RDS(on) = 0.75Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED ADD SUFFIX “T4” FOR ORDERING IN TAPE & REEL ADD SUFFIX “-1” FOR ORDERING IN IPAK 3 1 DPAK IPAK 1 3 2 DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. INTERNAL SCHEMATIC DIAGRAM DataSheet4U.com APPLICATIONS SWITH MODE LOW POWER SUPPLIES (SMPS) s CFL s DataShee ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (s) PTOT dv/dt(1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 400 400 ±30 5 3 20 55 0.44 3 –65 to 150 150 (1)ISD ≤5A, di/dt ≤100A/µs, VDD ≤ V (BR)DSS, T j ≤ T JMAX. Unit V V V A A A W W/°C V/ns °C °C ()Pulse width limited by safe operating area March 2001 1/9 DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com STD6NC40 THERMAL DATA Rthj-case Rthj-amb Rthc-sink Tl Thermal Resistance ...