2SD2693A

www.DataSheet4U.com Power Transistors 2SD2693A Silicon NPN triple diffusion planar type Unit: mm For power amplification ■ Features Wide safe oeration area Satisfactory linearity of forward current transfer ratio hFE Low collector-emitter saturation voltage VCE(sat) Full-pack package which can be installed to the heat sink with one screw. 9.9±0.3 3.0±0.5 4.6±0.2 2.9±0.2 13.7±0.2 4.2±0.2 Solder Dip 15.0±0.5 φ 3.2±0.1 1.4±0.2 1.6±0.2 0.8±0.1 2.6±0.1 ■ Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current * Collector power dissipation Ta = 25°C Junction temperature Storage temperature Tj Tstg Symbol VCBO VCEO VEBO IC ICP PC Rating 80 80 6 3 5 25 2.0 Unit V V V A A W 0.55±0.15 2.54±0.30 5.08±0.50 1 2 3 1: Base 2: Collector 3: Emitter TO-220D-A1 Package DataShee Internal Connection C B E DataSheet4U.com 150 °C −55 to +150 °C Note) *: Non-repetitive peak collector current ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Collector-emitter voltage (Base open) *1 Symbol VCEO ICBO ICEO IEBO hFE1 *2 hFE2 Collector-emitter saturation voltage *1 Transition frequency Turn-on time Storage time Fall time VCE(sat) fT ton tstg tf Conditions IC = 30 mA, IB = 0 VCB = 80 V, IE = 0 VCE = 80 V, IB = 0 VEB = 6 V, IC = 0 VCE = 4 V, IC = 1 A VCE = 4 V, IC = 3 A IC = 3 A, IB = 0.375 A VCE = 10 V, IC = 0.5 A, f = 10 MHz IC = 1 ...