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type Transistor. 2SD2693A Datasheet

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type Transistor. 2SD2693A Datasheet
















2SD2693A Transistor. Datasheet pdf. Equivalent













Part

2SD2693A

Description

Silicon NPN triple diffusion planar type Transistor



Feature


www.DataSheet4U.com Power Transistors 2SD2693A Silicon NPN triple diffusion p lanar type Unit: mm For power amplific ation ■ Features • Wide safe oerati on area • Satisfactory linearity of f orward current transfer ratio hFE • L ow collector-emitter saturation voltage VCE(sat) • Full-pack package which c an be installed to the heat sink with o ne screw. 9.9±0.3 3.0±0.5 .
Manufacture

Panasonic Semiconductor

Datasheet
Download 2SD2693A Datasheet


Panasonic Semiconductor 2SD2693A

2SD2693A; 4.6±0.2 2.9±0.2 13.7±0.2 4.2±0.2 So lder Dip 15.0±0.5 φ 3.2±0.1 1.4± 0.2 1.6±0.2 0.8±0.1 2.6±0.1 ■ Ab solute Maximum Ratings TC = 25°C Param eter Collector-base voltage (Emitter op en) Collector-emitter voltage (Base ope n) Emitter-base voltage (Collector open ) Collector current Peak collector curr ent * Collector power dissipation Ta = 25°C Junction temperature Storag.


Panasonic Semiconductor 2SD2693A

e temperature Tj Tstg Symbol VCBO VCEO V EBO IC ICP PC Rating 80 80 6 3 5 25 2.0 Unit V V V A A W 0.55±0.15 2.54±0. 30 5.08±0.50 1 2 3 1: Base 2: Collect or 3: Emitter TO-220D-A1 Package DataS hee Internal Connection C B E DataShe et4U.com 150 °C −55 to +150 °C Not e) *: Non-repetitive peak collector cur rent ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Col.


Panasonic Semiconductor 2SD2693A

lector-emitter voltage (Base open) *1 Sy mbol VCEO ICBO ICEO IEBO hFE1 *2 hFE2 C ollector-emitter saturation voltage *1 Transition frequency Turn-on time Stora ge time Fall time VCE(sat) fT ton tstg tf Conditions IC = 30 mA, IB = 0 VCB = 80 V, IE = 0 VCE = 80 V, IB = 0 VEB = 6 V, IC = 0 VCE = 4 V, IC = 1 A VCE = 4 V, IC = 3 A IC = 3 A, IB = 0.375 A VCE = 10 V, IC = 0.5 A.




Part

2SD2693A

Description

Silicon NPN triple diffusion planar type Transistor



Feature


www.DataSheet4U.com Power Transistors 2SD2693A Silicon NPN triple diffusion p lanar type Unit: mm For power amplific ation ■ Features • Wide safe oerati on area • Satisfactory linearity of f orward current transfer ratio hFE • L ow collector-emitter saturation voltage VCE(sat) • Full-pack package which c an be installed to the heat sink with o ne screw. 9.9±0.3 3.0±0.5 .
Manufacture

Panasonic Semiconductor

Datasheet
Download 2SD2693A Datasheet




 2SD2693A
www.DataSheet4U.com
Power Transistors
2SD2693A
Silicon NPN triple diffusion planar type
For power amplification
9.9±0.3
Unit: mm
4.6±0.2
2.9±0.2
Features
Wide safe oeration area
Satisfactory linearity of forward current transfer ratio hFE
Low collector-emitter saturation voltage VCE(sat)
Full-pack package which can be installed to the heat sink with one
screw.
Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current *
Collector power dissipation
Junction temperature
Ta = 25°C
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
80 V
80 V
6V
3A
5A
25 W
2.0
Da1t5a0Sheet4°UC .com
55 to +150 °C
Note) *: Non-repetitive peak collector current
φ 3.2±0.1
1.4±0.2
1.6±0.2
0.8±0.1
2.6±0.1
0.55±0.15
2.54±0.30
5.08±0.50
123
1: Base
2: Collector
3: Emitter
TO-220D-A1 Package
Internal Connection
DataShee
C
B
E
Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Collector-emitter voltage (Base open) *1 VCEO
Collector-base cutoff current (Emitter open) ICBO
Collector-emitter cutoff current (Base open) ICEO
Emitter-base cutoff current (Collector open)
Forward current transfer ratio *1
IEBO
hFE1 *2
Collector-emitter saturation voltage *1
hFE2
VCE(sat)
Transition frequency
fT
Turn-on time
ton
Storage time
tstg
Fall time
tf
Conditions
IC = 30 mA, IB = 0
VCB = 80 V, IE = 0
VCE = 80 V, IB = 0
VEB = 6 V, IC = 0
VCE = 4 V, IC = 1 A
VCE = 4 V, IC = 3 A
IC = 3 A, IB = 0.375 A
VCE = 10 V, IC = 0.5 A, f = 10 MHz
IC = 1 A, Resistance loaded
IB1 = 0.1 A, IB2 = − 0.1 A
VCC = 50 V
Min Typ Max Unit
80 V
100 µA
100 µA
1 mA
70 250
10
0.8 V
30 MHz
0.1 µs
2.3 µs
0.3 µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
Q
P
DataSheet4U.com hFE1
70 to 150
120 to 250
Publication date: July 2004
SJD00322AED
1




 2SD2693A
www.DataSheet4U.com
et4U.com
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of
the products or technical information described in this material and controlled under the "Foreign Exchange
and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and
applied circuits examples of the products. It neither warrants non-infringement of intellectual property right
or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical
information as described in this material.
(4) The products described in this material are intended to be used for standard applications or general elec-
tronic equipment (such as office equipment, communications equipment, measuring instruments and house-
hold appliances).
Consult our sales staff in advance for information on the following applications:
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combus-
tion equipment, life support systems and safety devices) in which exceptional quality and reliability are
required, or if the failure or malfunction of the products may directly jeopardize life or harm the human
body.
Any applications other than the standard applications intended.
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(5) The products and product specifications described in this material are subject to change without notice for
modification and/or improvement. At the final stage of your design, purchasing, or use of the products,
therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifica-
tions satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rat-
ing, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not
be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such
as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent
physical injury, fire, social damages, for example, by using the products.
(7) When using products for which damp-proof packing is required, observe the conditions (including shelf life
and amount of time let standing of unsealed items) agreed upon when specification sheets are individually
exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
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2003 SEP








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