256Kx16bit full CMOS SRAM
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HY62SF16403A Series
256Kx16bit full CMOS SRAM
Document Title
256K x16 bit 1.7 ~ 2.3V Super Low Pow...
Description
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HY62SF16403A Series
256Kx16bit full CMOS SRAM
Document Title
256K x16 bit 1.7 ~ 2.3V Super Low Power FCMOS Slow SRAM
Revision History
Revision No 08 History Icc1 Value change. 30mA -> 20mA Marking Information add tBLZ / tOLZ value is changed Output Load is redefined Isb, Isb1, Vdr, Iccdr are redefined Changed Logo Changed Isb1 values Draft Date Nov.22.2000 Remark Final
09
Dec.18.2000
Final
10 11
Mar.23.2001 Jun.07.2001
Final Final
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DataShee
This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility DataSheet4U.com for use of circuits described. No patent licenses are implied. Rev.11 / Jun.01 Hynix Semiconductor
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HY62SF16403A Series
DESCRIPTION
The HY62SF16403A is a high speed, super low power and 4Mbit full CMOS SRAM organized as 256K words by 16bits. The HY62SF16403A uses high performance full CMOS process technology and is designed for high speed and low power circuit technology. It is particularly well-suited for the high density low power system application. This device has a data retention mode that guarantees data to remain valid at a minimum power supply voltage of 1.2V.
FEATURES
Fully static operation and Tri-state output TTL compatible inputs and outputs Battery backup -. 1.2V(min) data retention Standard pin configuration -. 48-ball uBGA
Product No.
Voltage (V)
Speed (ns)
Operation Current/Icc(mA) 3 3
HY...
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