IXGH20N60

Low VCE(sat) IGBT High speed IGBT IXGH/IXGM 20 N60 IXGH/IXGM 20 N60A VCES 600 V 600 V IC25 40 A 40 A VCE(sat) 2.5 V 3.0 V Symbol Test Conditions Maximum Ratings VCES V CGR VGES V GEM IC25 IC90 I CM SSOA (RBSOA) TJ = 25°C to 150°C T J = 25°C to 150°C; R GE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C T C = 25°C, 1 ms VGE= 15 V, TVJ = 125°C, RG = 82 Ω Clamped inductive load, L = 100 µH P C TJ TJM T stg Md Weight T C = 25°C Mounting torque (M3) Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s 600 V 600 V ±20 V ±30 V 40 A 20 A 80 A ICM = 40 A @ 0.8 VCES 150 W -55 ... +150 °C 150 °C -55 ... +150 °C 1.13/10 Nm/lb.in. TO-204 = 18 g, TO-247 = 6 g 300 °C Symbol BV CES VGE(th) ICES I GES V CE(sat) Test Conditions Characteristic Values (T J = 25°C, unless otherwise specified) min. typ. max. I C = 250 µA, V GE = 0 V 600 IC = 250 µA, VCE = VGE 2.5 VCE = 0.8 VCES V =0V GE TJ = 25°C T J = 125°C V CE = 0 V, V GE = ±20 V I = I , V = 15 V C C90 GE 20N60 20N60A V 5V 200 µA 1 mA ±100 nA 2.5 V 3.0 V TO-247 AD (IXGH) G C E TO-204 AE (IXGM) G = Gate, E = Emitter, C C = Collector, TAB = Collector Features l International standard packages l 2nd generation HDMOSTM process l Low V CE(sat) - for low on-state conduction losses l High current handling capability l MOS Gate turn-on - drive simplicity l Voltage rating guaranteed at high temperature (125°C) Applications l AC...