M36P0R9070E0

www.DataSheet4U.com M36P0R9070E0 512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 128 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package PRELIMINARY DATA Features summary ■ Multi-chip package – 1die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash Memory – 1 die of 128Mbit (8Mb x16) PSRAM Supply voltage – VDDF = VCCP = VDDQ = 1.7 to 1.95V – VPPF = 9V for fast program (12V tolerant) Electronic signature – Manufacturer Code: 20h – Device Code: 8819 Package – ECOPACK® Synchronous / asynchronous read – Synchronous Burst Read mode: 108MHz, 66MHz ■ FBGA ■ TFBGA107 (ZAC) ■ ■ Security – 2112-bit user programmable OTP Cells – 64-bit unique device number 100,000 program/erase cycles per block ■ ■ Flash memory ■ – Asynchronous Page Read mode – Random Access: 93ns ■ Block locking – All Blocks locked at power-up – Any combination of Blocks can be locked DataSheet4U.com with zero latency – WPF for Block Lock-Down – Absolute Write Protection with VPPF = VSS ■ DataShee Programming time – 4µs typical Word program time using Buffer Enhanced Factory Program command Memory organization – Multiple Bank Memory Array: 64 Mbit Banks – Four Extended Flash Array (EFA) Blocks of 64 Kbits Dual operations – program/erase in one Bank while read in others – No delay between read and write operations Common Flash Interface (CFI) Access time: 70ns Asynchronous Page Read – Page Size: 4, 8 or 16 Words – Subsequent read within page: 20ns Low power features – Partia...