D2627

Ordering number : ENN6478 2SD2627 NPN Triple Diffused Planar Silicon Transistor 2SD2627 Color TV Horizontal Deflection Output Applications Features High speed. High breakdown voltage(VCBO=1500V). High reliability(Adoption of HVP process). Adoption of MBIT process. On-chip damper diode. Package Dimensions unit : mm 2079C 10.0 3.2 [2SD2627] 4.5 2.8 3.5 7.2 16.0 0.6 16.1 3.6 0.9 1.2 14.0 0.75 1 23 2.4 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Symbol VCBO VCEO VEBO IC ICP Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg Electrical Characteristics at Ta=25°C Tc=25°C 2.55 2.55 Conditions Parameter Collector Cutoff Current Collector Cutoff Current Collector Sustain Voltage Emitter Cutoff Current Symbol Conditions ICBO ICES VCEO(sus) IEBO VCE=800V, IE=0 VCE=1500V, RBE=0 IC=100mA, IB=0 VEB=4V, IC=0 0.7 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220FI-LS Ratings Unit 1500 V 800 V 6 V 6 A 15 A 2.0 W 30 W 150 °C -55 to +150 °C min 800 40 Ratings Unit typ max 10 µA 1.0 mA V 130 mA Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications ...