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PROCESS
Power Transistor
CP211
Central
TM
NPN - Amp/Switch Transistor Chip
Semiconductor Corp...
www.DataSheet4U.com
PROCESS
Power
Transistor
CP211
Central
TM
NPN - Amp/Switch
Transistor Chip
Semiconductor Corp.
PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER 1,450 PRINCIPAL DEVICE TYPES 2N3054A DataSheet4U.com CJD41C TIP41C EPITAXIAL BASE 80 x 99 MILS 12.5 MILS 12 x 32 MILS 13 x 48 MILS Al - 30,000Å Cr/Ni/Ag 16,000Å
e DataShe
BACKSIDE COLLECTOR
145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com
R3 (21-September 2003)
DataSheet4U.com
www.DataSheet4U.com
Central
TM
PROCESS
CP211
Semiconductor Corp.
Typical Electrical Characteristics
et4U.com
DataSheet4U.com
145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com
R3 (21-September 2003)
DataSheet4U.com
...