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GHz Amplifier. AMMC-5618 Datasheet

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GHz Amplifier. AMMC-5618 Datasheet
















AMMC-5618 Amplifier. Datasheet pdf. Equivalent













Part

AMMC-5618

Description

6 - 20 GHz Amplifier



Feature


www.DataSheet4U.com Agilent AMMC-5618 6 - 20 GHz Amplifier Data Sheet Chip Siz e: 920 x 920 µm (36.2 x 36.2 mils) 100 ± 10µm (4 ± 0.4 mils) 80 x 80 µm ( 3.1 x 3.1 mils or larger) Chip Size To lerance: ± 10µm (± 0.4 mils) Chip Th ickness: Pad Dimensions: Description A gilent’s AMMC- 5618 6−20 GHz MMIC i s an efficient two- stage amplifier des igned to be used as a cascadab.
Manufacture

Hewlett-Packard

Datasheet
Download AMMC-5618 Datasheet


Hewlett-Packard AMMC-5618

AMMC-5618; le intermediate gain block for EW applic ations. In communication systems, it ca n be used as a LO buffer, or as a trans mit driver amplifier. It is fabricated using a PHEMT integrated circuit struct ure that provides exceptional efficienc y and flat gain performance. During typ ical operation with a single 5- V suppl y, each gain stage is biased for Class- A operation for o.


Hewlett-Packard AMMC-5618

ptimal power output with minimal distort ion. The RF input and output have match ing circuitry for use in 50- Ω enviro nments. The backside of the chip is bot h RF and DC ground. This helps simplify the assembly process and reduces assem bly related performance variations and costs. The MMIC is a cost effective alt ernative to hybrid (discrete FET) ampli fiers that require c.


Hewlett-Packard AMMC-5618

omplex tuning and assembly processes. Fe atures • Frequency Range: 6 − 20 GH z • High Gain: 14.5 dB Typical • Ou tput Power: 19.5 dBm Typical • Input and Output Return Loss: < -12 dB DataSh eet4U.com • Single Supply Bias: 5 V @ 107 mA AMMC-5618 Absolute Maximum Rati ngs [1] Symbol VD1,VD2 VG1 VG2 ID1 ID2 Pin Tch Tb Tstg Tmax Note: 1. Operation in excess of any one of these.





Part

AMMC-5618

Description

6 - 20 GHz Amplifier



Feature


www.DataSheet4U.com Agilent AMMC-5618 6 - 20 GHz Amplifier Data Sheet Chip Siz e: 920 x 920 µm (36.2 x 36.2 mils) 100 ± 10µm (4 ± 0.4 mils) 80 x 80 µm ( 3.1 x 3.1 mils or larger) Chip Size To lerance: ± 10µm (± 0.4 mils) Chip Th ickness: Pad Dimensions: Description A gilent’s AMMC- 5618 6−20 GHz MMIC i s an efficient two- stage amplifier des igned to be used as a cascadab.
Manufacture

Hewlett-Packard

Datasheet
Download AMMC-5618 Datasheet




 AMMC-5618
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Agilent AMMC-5618
6 - 20 GHz Amplifier
Data Sheet
Chip Size:
920 x 920 µm (36.2 x 36.2 mils)
Chip Size Tolerance:± 10µm (± 0.4 mils)
Chip Thickness: 100 ± 10µm (4 ± 0.4 mils)
Pad Dimensions: 80 x 80 µm (3.1 x 3.1 mils or larger)
Description
Agilent’s AMMC- 5618 620 GHz
MMIC is an efficient two- stage
amplifier designed to be used as
a cascadable intermediate gain
block for EW applications. In
communication systems, it can
be used as a LO buffer, or as a
transmit driver amplifier. It is
fabricated using a PHEMT
integrated circuit structure that
provides exceptional efficiency
and flat gain performance.
During typical operation with a
single 5- V supply, each gain
stage is biased for Class- A
operation for optimal power
output with minimal distortion.
The RF input and output have
matching circuitry for use in
50- environments. The
backside of the chip is both RF
and DC ground. This helps
simplify the assembly process
and reduces assembly related
performance variations and
costs. The MMIC is a cost
effective alternative to hybrid
(discrete FET) amplifiers that
require complex tuning and
assembly processes.
Features
Frequency Range: 6 20 GHz
• High Gain: 14.5 dB Typical
• Output Power: 19.5 dBm Typical
• Input and Output Return Loss: < -12
dB DataSheet4U.com
Flat Gain Response: ± 0.3 dB Typical
• Single Supply Bias: 5 V @ 107 mA
Applications
• Driver/Buffer in microwave
communication systems
• Cascadable gain stage for EW
systems
• Phased array radar and transmit
amplifiers
AMMC-5618 Absolute Maximum Ratings [1]
Symbol Parameters/Conditions
Units Min. Max.
VD1,VD2 Drain Supply Voltage
V7
VG1 Optional Gate Voltage
V -5 +1
VG2 Optional Gate Voltage
V -5 +1
ID1 Drain Supply Current
mA 70
ID2 Drain Supply Current
mA 84
Pin RF Input Power
dBm 20
Tch Channel Temp.
°C +150
Tb Operating Backside Temp.
°C -55
Tstg Storage Temp.
°C -65 +165
Tmax Maximum Assembly Temp. (60 sec max) °C
+300
Note:
1. Operation in excess of any one of these conditions may result in permanent damage to this device.
Note: These devices are ESD sensitive. The following precautions are strongly recommended:
Ensure that an ESD approved carrier is used when dice are transported from one destination to another.
Personal grounding is to be worn at all times when handling these devices.
DataSheet4U.com
DataShee




 AMMC-5618
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AMMC-5618 DC Specifications / Physical Properties [1]
Symbol
Parameters and Test Conditions
Unit Min. Typical
VD1,VD2
Recommended Drain Supply Voltage
V3 5
ID1 First stage Drain Supply Current
(V D1= 5V, VG1 = Open or Ground)
mA 48
ID2 Second stage Drain Supply Current
(V D2= 5V, VG2 = Open or Ground)
mA 59
ID1 + ID2
θ ch-b
Total Drain Supply Current
(VG1 = VG2 = Open or Ground, VD1= VD2 = 5 V)
Thermal Resistance [2]
(Backside temperature (Tb) = 25°C
mA
°C/W
107
22
Notes:
1. Backside temperature Tb = 25°C unless otherwise noted
2. Channel-to-backside Thermal Resistance (θch-b) = 32°C/W at Tchannel (Tc) = 150°C as measured using infrared microscopy.
Thermal Resistance at backside temperature (Tb) = 25°C calculated from measured data.
Max.
7
140
et4U.com
AMMC-5618 RF Specifications [3]
(Tb = 25°C, VDD= 5 V, IDD = 107 mA, Z0 = 50 .)
Symbol
|S21|2
|S21|2
RLin
RLout
|S12|2
P-1dB
Psat
OIP3
S21 / T
NF
Parameters and Test Conditions
Small-signal Gain
Small-signal Gain Flatness
DataSheet4U.com
Input Return Loss
Output Return Loss
Isolation
Output Power at 1dB Gain Compression @ 20 GHz
Saturated Output Power (3dB Gain Compression) @ 20 GHz
Output 3rd Order Intercept Point @ 20 GHz
Temperature Coefficient of Gain [2]
Noise Figure @ 20 GHz
Notes:
3. 100% on-wafer RF test is done at frequency = 6, 13 and 20 GHz, except as noted.
4. Temperature Coefficient of Gain based on sample test
Unit
dB
dB
dB
dB
dB
dBm
dBm
dBm
dB/°C
dB
Min.
12.5
9
9
-40
17.5
19
Typical
14.5
± 0.3
12
12
-45
19.5
20.5
26
-0.023
4.4
Max.
6.5
DataShee
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2




 AMMC-5618
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AMMC-5618 Typical Performance (Tchuck=25°C, VDD=5V, IDD = 107 mA, Zo=50)
18
15
12
9
6
3
0
4 7 10 13 16 19 22
FREQUENCY (GHz)
0
-10
-20
-30
-40
-50
-60
-70
4
7 10 13 16 19 22
FREQUENCY (GHz)
0
-5
-10
-15
-20
-25
4
7 10 13 16 19 22
FREQUENCY (GHz)
Figure 1. Gain
Figure 2. Isolation
Figure 3. Input Return Loss
et4U.com
0 10 24
-5
-10
-15
-20
-25
-30
4
7 10 13 16 19 22
FREQUENCY (GHz)
8
6
4
2
0 DataSheet4U.com
4 7 10 13 16 19 22
FREQUENCY (GHz)
20
16
12
8
4
0
4 7 10 13 16 19 22
FREQUENCY (GHz)
Figure 4. Output Return Loss
Figure 5. Noise Figure
Figure 6. Output Power at 1 dB Gain Compres-
sion
AMMC-5618 Typical Performance vs. Supply Voltage (Tb=25°C, Zo=50)
18
15
12
9
Vdd=4V
6 Vdd=5V
Vdd=6V
3
0
4 7 10 13 16 19 22
FREQUENCY (GHz)
Figure 7. Gain and Voltage
0
Vdd=4V
-10 Vdd=5V
Vdd=6V
-20
-30
-40
-50
-60
4 7 10 13 16 19 22
FREQUENCY (GHz)
Figure 8. Isolation and Voltage
0
-5
-10
-15
-20
-25
-30
4
Vdd=4V
Vdd=5V
Vdd=6V
7 10 13 16 19 22
FREQUENCY (GHz)
Figure 9. Input Return Loss and Voltage
DataShee
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3




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