MZT3055

www.DataSheet4U.com Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL TRANSISTORS MZT2955 PNP MZT3055 NPN SOT-223 Formed SMD Package With excellent Safe Operating Area, ideal for Hi-Fi Amplifier and Switching Regulator Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Base Current Power Dissipation upto Tc=25ºC Derate above 25ºC Power Dissipation upto Ta=25ºC Derate above 25ºC Junction Temperature Storage Temperature THERMAL RESISTANCE Junction to Case Junction to Ambient in free air SYMBOL VCEO VCBO VEBO IC IB PD DataSheet4U.com VALUE 60 70 5.0 10 6.0 8.0 64 2.0 16 150 - 55 to +150 UNIT V V V A A PD Tj Tstg W mW/ºC DataShee W mW/ºC ºC ºC Rth (j-c) Rth (j-a) 15.6 62.5 ºC/W ºC/W ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise ) DESCRIPTION Collector Emitter Voltage Collector Cut Off Current Collector Cut Off Current Collector Cut Off Current Emitter Cut Off Current DC Current Gain Collector Emitter Saturation Voltage SYMBOL VCEO ICEX ICBO ICEO IEBO *hFE *VCE (sat) TEST CONDITION IC=1mA, IB=0 VCE=70V, VEB (off)=1.5V VCE=70V, VEB (off)=1.5V, TC=150ºC VCB=70V, IE=0 VCB=70V, IE=0, TC=150ºC VCE=30V, IB=0 VEB=5V, IC=0 IC=4A, VCE=4V IC=10A, VCE=4V IC=4A, IB=400mA IC=10A, IB=3.3A IC=4A, VCE=4V IC=0.5A, VCE=10V, f=500KHz 20 5 MIN 60 MAX 1.0 5.0 1.0 10 0.7 5.0 100 1.1 8.0 1.8 2 V V V MHz UNIT V mA ...