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NTQD6968N Dataheets PDF



Part Number NTQD6968N
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Power MOSFET
Datasheet NTQD6968N DatasheetNTQD6968N Datasheet (PDF)

NTQD6968N Power MOSFET 7.0 A, 20 V, Common Drain, Dual N−Channel, TSSOP−8 Features • Low RDS(on) • Higher Efficiency Extending Battery Life • Logic Level Gate Drive • 3 mm Wide TSSOP−8 Surface Mount Package • High Speed, Soft Recovery Diode • TSSOP−8 Mounting Information Provided • Pb−Free Package is Available Applications • Battery Protection Circuits MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage − Continuous Dra.

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NTQD6968N Power MOSFET 7.0 A, 20 V, Common Drain, Dual N−Channel, TSSOP−8 Features • Low RDS(on) • Higher Efficiency Extending Battery Life • Logic Level Gate Drive • 3 mm Wide TSSOP−8 Surface Mount Package • High Speed, Soft Recovery Diode • TSSOP−8 Mounting Information Provided • Pb−Free Package is Available Applications • Battery Protection Circuits MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage − Continuous Drain Current − Continuous @ TA 25°C (Note 1) − Continuous @ TA 70°C (Note 1) − Pulsed (Note 3) Total Power Dissipation @ TA 25°C (Note 1) Drain Current − Continuous @ TA 25°C (Note 2) − Continuous @ TA 70°C (Note 2) − Pulsed (Note 3) Total Power Dissipation @ TA 25°C (Note 2) Operating and Storage Temperature Range VDSS 20 Vdc VGS "12 Vdc Adc ID 7.0 ID 5.6 IDM 20 PD 1.81 W Adc ID 6.2 ID 4.9 IDM 18 PD 1.39 W TJ, Tstg − 55 to °C +150 Thermal Resistance − Junction−to−Ambient (Note 1) Junction−to−Ambient (Note 2) RqJA °C/W 69 90 Maximum Lead Temperature for Soldering Pur- TL poses for 10 seconds 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Mounted onto a 2″ square FR−4 Board (1 in sq, 2 oz. Cu 0.06″ thick single sided), t ≤ 10 sec. 2. Mounted onto a 2″ square FR−4 Board (1 in sq, 2 oz. Cu 0.06″ thick single sided), Steady State. 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%. http://onsemi.com V(BR)DSS 20 V RDS(on) TYP 17 mW @ 4.5 V ID MAX 7.0 A N−Channel D N−Channel D G1 G2 S1 S2 MARKING DIAGRAM & PIN ASSIGNMENT D S2 S2 G2 8 1 TSSOP−8 CASE 948S PLASTIC E68 YWW AG 1 D S1 S1 G1 E68 = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package ORDERING INFORMATION Device Package Shipping† NTQD6968N TSSOP−8 100 Units / Rail NTQD6968NR2 TSSOP−8 4000/Tape & Reel NTQD6968NR2G TSSOP−8 4000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2006 1 May, 2006 − Rev. 3 Publication Order Number: NTQD6968N/D NTQD6968N ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (VGS = 0 Vdc, ID = 250 mAdc) Temperature Coefficient (Positive) V(BR)DSS 20 − Zero Gate Voltage Collector Current (VDS = 16 Vdc, VGS = 0 Vdc, TJ = 25°C) (VDS = 16 Vdc, VGS = 0 Vdc, TJ = 125°C) IDSS − − Gate−Body Leakage Current (VGS = ±12 Vdc, VDS = 0 Vdc) IGSS − ON CHARACTERISTICS Gate Threshold Voltage (VDS = VGS, ID = 250 mAdc) Temperature Coefficient (Negative) VGS(th) 0.6 − Static Drain−.


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