Document
NTQD6968N
Power MOSFET
7.0 A, 20 V, Common Drain, Dual N−Channel, TSSOP−8
Features
• Low RDS(on) • Higher Efficiency Extending Battery Life • Logic Level Gate Drive • 3 mm Wide TSSOP−8 Surface Mount Package • High Speed, Soft Recovery Diode • TSSOP−8 Mounting Information Provided • Pb−Free Package is Available
Applications
• Battery Protection Circuits
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Drain Current − Continuous @ TA 25°C (Note 1) − Continuous @ TA 70°C (Note 1) − Pulsed (Note 3)
Total Power Dissipation @ TA 25°C (Note 1)
Drain Current − Continuous @ TA 25°C (Note 2) − Continuous @ TA 70°C (Note 2) − Pulsed (Note 3)
Total Power Dissipation @ TA 25°C (Note 2)
Operating and Storage Temperature Range
VDSS
20 Vdc
VGS
"12 Vdc
Adc
ID
7.0
ID
5.6
IDM
20
PD
1.81 W
Adc
ID
6.2
ID
4.9
IDM
18
PD
1.39 W
TJ, Tstg − 55 to °C +150
Thermal Resistance − Junction−to−Ambient (Note 1) Junction−to−Ambient (Note 2)
RqJA
°C/W 69 90
Maximum Lead Temperature for Soldering Pur-
TL
poses for 10 seconds
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability. 1. Mounted onto a 2″ square FR−4 Board
(1 in sq, 2 oz. Cu 0.06″ thick single sided), t ≤ 10 sec. 2. Mounted onto a 2″ square FR−4 Board
(1 in sq, 2 oz. Cu 0.06″ thick single sided), Steady State. 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%.
http://onsemi.com
V(BR)DSS 20 V
RDS(on) TYP 17 mW @ 4.5 V
ID MAX 7.0 A
N−Channel D
N−Channel D
G1
G2
S1
S2
MARKING DIAGRAM & PIN ASSIGNMENT
D S2 S2 G2 8
1
TSSOP−8 CASE 948S
PLASTIC
E68 YWW
AG
1 D S1 S1 G1
E68 = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping†
NTQD6968N
TSSOP−8 100 Units / Rail
NTQD6968NR2 TSSOP−8 4000/Tape & Reel
NTQD6968NR2G TSSOP−8 4000/Tape & Reel (Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2006
1
May, 2006 − Rev. 3
Publication Order Number: NTQD6968N/D
NTQD6968N
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic
Symbol Min
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (VGS = 0 Vdc, ID = 250 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS 20
−
Zero Gate Voltage Collector Current (VDS = 16 Vdc, VGS = 0 Vdc, TJ = 25°C) (VDS = 16 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS −
−
Gate−Body Leakage Current (VGS = ±12 Vdc, VDS = 0 Vdc)
IGSS −
ON CHARACTERISTICS
Gate Threshold Voltage (VDS = VGS, ID = 250 mAdc)
Temperature Coefficient (Negative)
VGS(th) 0.6
−
Static Drain−.